Нелинейная По Концентрации Поверхностных Состояний Модель Барьера Шоттки И Расчет Вольт-Амперных Характеристик Диодов На Основе SiC И Его Твердых Растворов В Составной Модели Токопереноса

AbstractA modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of diodes with the Schottky barrier M/(SiC)_1– x (AlN)_ x and those of heterojunctions based on SiC and its solid solutions taking into account Φ_g ≈ Φ_B. The results of calculations of the Schottky-barrier heights are consistent with the experimental data obtained from measurements of the photocurrent for metals (M): Al, Ti, Cr, and Ni. The I–V characteristics in the composite–additive model of charge transport agree with the experimental data for the n -M/ p -(SiC)_1– x (AlN)_ x and n -6 H -SiC/ p -(SiC)_0.85(AlN)_0.15 systems.