Single-event Upset Testing. Final Report

This report presents the results of an experimental program to characterize single event upset phenomena in selected bipolar memory devices irradiated with relativistic heavy ions. The principle objective was to determine the multibit upset rate at normal and parallel beam incidence angles. The impetus for this objective is that multibit errors are not generally detectable by the simple Hamming codes currently used on spacecraft. Multibit errors significantly reduce spacecraft reliability in initiating spurious commands. It was found in this program that the multibit error cross section is equal to or greater than the projected area of the depletion regions for parallel and for normal to 60 degree incidence beams.