Solution Processable Nanowire Field-Effect Transistors

Opoku Charles, Chen Lichun,Meyer Frank,Shkunov Maxim

Materials Research Society (MRS)（2011）

University of Surrey

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摘要

Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~103 and hole mobilities of ~13 cm2/Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be used in large area inexpensive electronics.

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