1 . A data storage device comprising: a nonvolatile memory device including a plurality of dies including a plurality of word line groups in which a plurality of word lines are grouped; and a controller configured to control the nonvolatile memory device, the controller comprising: a word line health rating logic configured to determine a health rating of each word line and a health rating of each word line group based on state information on each of health rating factors associated with the plurality of word lines; a memory including a word line health rating table in which the health rating of each word line and the health rating of each word line group determined by the word line health rating logic are stored; and a mapping logic configured to, by referring to the word line health rating table, generate a management target logical super block by mapping one-word line group having a lowest health rating and a plurality of word line groups having a highest health rating in the respective dies, and generate a normal logical super block by mapping word line groups having intermediate health ratings in the respective dies.
2 . The data storage device according to claim 1 , wherein the word line health rating logic determines an average rating of health ratings of word lines included in each word line group, as the health rating of each word line group.
3 . The data storage device according to claim 1 , wherein the health rating factors include an erase/write cycle for a memory block in which each word line is included, a read pass/fail, a program pass/fail, a number of fail bits and an amount of leakage current for each word line.
4 . The data storage device according to claim 1 , wherein the controller further comprises a processor configured to control general operations of the controller, and wherein the processor generates XOR parity for data to be stored in the management target logical super block and ECC parity of the data, when performing a write operation for the management target logical super block, and controls the nonvolatile memory device to store the generated XOR parity in a word line selected among word lines included in the management target logical super block.
5 . The data storage device according to claim 4 , wherein the processor does not generate XOR parity for data to be stored in the normal logical super block and ECC parity of the data, when performing a write operation for the normal logical super block, and controls the nonvolatile memory device to store only the data and the ECC parity of the data in the normal logical super block.
6 . The data storage device according to claim 1 , wherein the mapping logic generates a management target super word line by mapping one-word line having the lowest health rating and a plurality of word lines having the highest health rating in the respective dies among word lines included in the management target logical super block, and generates a normal super word line by mapping word lines having remaining health ratings except the lowest health rating in the respective dies.
7 . The data storage device according to claim 6 , wherein the controller further comprises a processor configured to control general operations of the controller, and wherein the processor generates XOR parity for data to be stored in the management target super word line and ECC parity of the data, when performing a write operation for the management target super word line, and controls the nonvolatile memory device to store the generated XOR parity in a word line selected among word lines included in the management target super word line.
8 . The data storage device according to claim 7 , wherein the processor does not generate XOR parity for data to be stored in the normal super word line and ECC parity of the data, when performing a write operation for the normal super word line, and controls the nonvolatile memory device to store only the data and the ECC parity of the data in the normal super word line.
9 . A method for operating a data storage device including a nonvolatile memory device including a plurality of dies including a plurality of word line groups in which a plurality of word lines are grouped, and a controller which controls the nonvolatile memory device, the method comprising: determining a health rating of each word line and a health rating of each word line group based on state information on each of health rating factors associated with the plurality of word lines, by a word line health rating logic disposed in the controller; storing the health rating of each word line and the health rating of each word line group, in a word line health rating table included in a memory which is disposed in the controller; and generating a management target logical super block in which one-word line group having a lowest health rating and a plurality of word line groups having a highest health rating in the respective dies are mapped, and generating a normal logical super block in which word line groups having intermediate health ratings in the respective dies are mapped, by a mapping logic which is disposed in the controller.
10 . The method according to claim 9 , wherein, in the determining of the health rating of each word line and the health rating of each word line group, the health rating of each word line group is determined as an average rating of health ratings of corresponding word lines.
11 . The method according to claim 9 , wherein the health rating factors include an erase/write cycle for a memory block in which each word line is included, a read pass/fail, a program pass/fail, a number of fail bits and an amount of leakage current for each word line.
12 . The method according to claim 9 , further comprising, after the generating of the management target logical super block and the normal logical super block: generating XOR parity for data to be stored in the management target logical super block and ECC parity of the data, by the controller, when a write request for the management target logical super block is received; and storing the data, the ECC parity and the XOR parity in the management target logical super block, by the controller.
13 . The method according to claim 9 , further comprising, after the generating of the management target logical super block and the normal logical super block, storing data and ECC parity of the data in the normal logical super block, by the controller, when a write request for the normal logical super block is received.
14 . The method according to claim 9 , further comprising, after the generating of the management target logical super block and the normal logical super block, generating a management target super word line in which one-word line having the lowest health rating and a plurality of word lines having the highest health rating in the respective dies among word lines included in the management target logical super block are mapped, and generating a normal super word line in which word lines having remaining health ratings except the lowest health rating in the respective dies are mapped, by the mapping logic.
15 . The method according to claim 14 , further comprising, after the generating of the management target super word line and the normal super word line, generating XOR parity for data to be stored in the management target super word line and ECC parity of the data, by the controller, when a write request for the management target super word line is received; and storing the data, the ECC parity and the XOR parity in the management target super word line, by the controller.
16 . The method according to claim 14 , further comprising, after the generating of the management target super word line and the normal super word line, storing data and ECC parity of the data in the normal super word line, by the controller, when a write request for the normal super word line is received.
17 . A memory system comprising: at least first and second memory devices each including memory cell groups; and a controller suitable for: determining damage-degrees of the memory cell groups in the respective memory devices; and controlling, during a writ operation, the memory devices not to store therein XOR parity data for the memory cell groups except for a management target logical super block including the memory cell group having a lowest damage-degree in the first memory device and the memory cell group having a highest damage-degree in the second memory device.
