1. A method for producing at least one nanotip that comprises a tip having a radius of less than 10 nm from a material, hereinafter called a tip material, said method comprising the steps of: providing a substrate which consists of the tip material or comprises said tip material in the form of a coating; producing a mask from a mask material, wherein the mask material is selected so that, in a predefined reactive ion etching process, the mask material is removed at a lower etching rate than the tip material, carrying out the reactive ion etching process in an etching chamber, additionally selecting the mask material such that a gaseous component is released from the mask material during the reactive ion etching process, said gaseous component not being released from the tip material during the reactive ion etching process, detecting the gaseous component while the ion etching process is being carried out, repeatedly determining during the ion etching process whether an amount of the gaseous component in the etching chamber reaches a predefined lower threshold, said predefined lower threshold set to substantially no detection of the gaseous component, and stopping the reactive ion etching process as soon as the lower predefined threshold is reached.
2. The method according to claim 1 , wherein the gaseous component is detected by means of a detection method which uses a gas chromatograph or a spectrometer.
3. The method according to claim 1 , wherein the predefined lower threshold is a detection limit of the gaseous component in the detection method being used.
4. The method according to claim 1 , wherein for a given tip material and mask material, the ratio of the etching rate acting on the mask material to the etching rate acting on the tip material is set to 1:5.
5. The method according to claim 1 , wherein the predefined lower limit set to substantially no detection of the gaseous component is a value greater than a lower detection limit of the gaseous component in the detection method used, so that ions that are still available in the etching chamber for a short period time delay after stopping the reactive ion etching process are accounted for in the method.
6. The method according to claim 1 , wherein producing the mask comprises the following steps: applying a layer of the mask material directly on the tip material forming the substrate; applying an anti-reflection layer on the mask material; applying a photoresist layer on the anti-reflection layer; carrying out a photolithography process to structure the photoresist such that the photoresist remains only at those places where at least one nanotip having a radius of less than 10 nm is to be formed later in the process; carrying out a selective etching process to expose the substrate only at those places that are not covered by photoresist; and carrying out a selective etching process to remove all the layers except for the mask material and the substrate.
7. The method according to claim 6 , wherein the layer of the mask material is applied directly onto the tip material by means of plasma-enhanced chemical vapor deposition.
8. The method according to claim 1 , wherein the mask material is an oxide and that the gaseous component is oxygen.
9. The method according to claim 8 , wherein the mask material is SiO 2 and the tip material is Si.
10. The method according to claim 8 , wherein the mask material is SiO 2 and the tip material is a metal, and wherein the SiO 2 is produced at a temperature lower than the melting point of the metal.
11. The method according to claim 1 , wherein the tip material is selected from the group Si, W, Ta, Nb, Mo.
12. The method according to claim 11 , characterized in that the mask material is an oxide and that the gaseous component is oxygen.
13. The method according to claim 12 , wherein the mask material is an SiO 2 and the tip material is Si.
14. The method according to claim 12 , wherein the mask material is SiO 2 and the tip material is a metal, wherein the SiO 2 is produced at a temperature lower than the melting point of the metal.
15. The method according to claim 14 , wherein the gaseous component is detected by means of a detection method which uses a gas chromatograph or a spectrometer.
16. The method according to claim 15 , wherein the predefined lower threshold is a detection limit of the gaseous component in the detection method being used.
17. The method according to claim 16 , wherein for a given tip material and mask material, the ratio of the etching rate acting on the mask material to the etching rate acting on the tip material is set to 1:5.
18. The method according to claim 17 , wherein producing the mask comprises the following steps: applying a layer of the mask material directly on the tip material forming the substrate; applying an anti-reflection layer on the mask material; applying a photoresist layer on the anti-reflection layer; carrying out a photolithography process to structure the photoresist such that the photoresist remains only at those places where at least one nanotip that comprises a tip having a radius of less than 10 nm is to be formed later in the process; carrying out a selective etching process to expose the substrate only at those places that are not covered by photoresist; and carrying out a selective etching process to remove all the layers except for the mask material and the substrate.
19. The method according to claim 18 , wherein the layer of the mask material is applied directly onto the tip material by means of plasma-enhanced chemical vapor deposition.
