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    专

    一种基于自适应多普勒滤波-Radon Fourier变换的水声多目标检测方法

    12608206082E
    发明人
    孙大军, 侯开阳, 滕婷婷, 梅继丹, 曹津铭
    受让人
    UNIV HARBIN ENG
    申请人
    李伟, 皮特·史密斯, 深圳市兄弟高登投资集团有限公司, 张帜
    申请号
    271989
    申请日
    1965-08-11
    公开(公告)号
    12608206082E
    公开(公告)日
    2009-08-25
    IPC分类号
    F16K011/00G01N033/00G01N035/10
    CPC分类号
    -
    优先权号
    10-2020-0130449
    优先权日
    2020-10-07
    摘要

    The sound pickup arm has a stylus locating in the groove of the rotating disc, a sound head held by a bracket and having a magnetic system with three pole shoes, and a stylus unit cooperating with the magnetic system and on the sound head. An elongated support for the pole shoes and the coils.

    The stylus unit is fixed to a retaining sleeve that slides over the screening cap. The support is made of plastic and has a return bracket whose angled rearward limbs contact the rearward ends of straight pole rods on which the flange-less coils are wound. The bracket slides in laterally through a slot in the support.

    权利要求
    1. A device for inspecting a semiconductor device including an element substrate comprising: an opposing detector substrate; a source of an electromagnetic wave comprising a soft X-ray; and a shielding plate having a hole and shielding the electromagnetic wave, wherein the electromagnetic wave passes through the hole, and wherein a gas present between the element substrate and the opposing detector substrate is ionized by the electromagnetic wave.
    2. A device for inspecting a semiconductor device according to claim 1 wherein the semiconductor device comprises a transistor.
    3. A device for inspecting a semiconductor device according to claim 1 wherein the semiconductor device comprises a wiring.
    4. A device for inspecting a semiconductor device according to claim 1 wherein the ionized gas establishes an electric path.
    5. A device for inspecting a semiconductor device according to claim 4 wherein a current flows along the electric path.
    6. A device for inspecting a semiconductor device according to claim 1 wherein the gas comprises air.
    7. A device for inspecting a semiconductor device according to claim 1 wherein the electromagnetic wave has a wavelength of 0.01 to 100 nm.
    8. A device for inspecting a semiconductor device according to claim 1 , further comprising: a mirror for focusing the soft X-ray emitted from the source of the electromagnetic wave.
    9. A device for inspecting a semiconductor device including an element substrate comprising: an opposing detector substrate; a source of an electromagnetic wave comprising a soft X-ray; and a shielding plate having a hole and shielding the electromagnetic wave, wherein the electromagnetic wave passes through the hole, and wherein a gas present between a pixel provided on the element substrate and the opposing detector substrate is ionized by the electromagnetic wave.
    10. A device for inspecting a semiconductor device according to claim 9 wherein the semiconductor device comprises a transistor.
    11. A device for inspecting a semiconductor device according to claim 9 wherein the semiconductor device comprises a wiring.
    12. A device for inspecting a semiconductor device according to claim 9 wherein the ionized gas establishes an electric path.
    13. A device for inspecting a semiconductor device according to claim 12 wherein a current flows along the electric path.
    14. A device for inspecting a semiconductor device according to claim 9 wherein the gas comprises air.
    15. A device for inspecting a semiconductor device according to claim 9 wherein the electromagnetic wave has a wavelength of 0.01 to 100 nm.
    16. A device for inspecting a semiconductor device according to claim 9 , further comprising: a mirror for focusing the soft X-ray emitted from the source of the electromagnetic wave.
    17. A device for inspecting a semiconductor device including an element substrate comprising: an opposing detector substrate; a source of an electromagnetic wave comprising a soft X-ray; and a shielding plate having a hole and shielding the electromagnetic wave, wherein the electromagnetic wave passes through the hole, and wherein a gas present between a pixel provided on the element substrate and the opposing detector substrate is ionized by the electromagnetic wave, wherein the shielding plate comprises lead glass.
    18. A device for inspecting a semiconductor device according to claim 17 wherein the semiconductor device comprises a transistor.
    19. A device for inspecting a semiconductor device according to claim 17 wherein the semiconductor device comprises a wiring.
    20. A device for inspecting a semiconductor device according to claim 17 wherein the ionized gas establishes an electric path.
    21. A device for inspecting a semiconductor device according to claim 20 wherein a current flows along the electric path.
    22. A device for inspecting a semiconductor device according to claim 17 wherein the gas comprises air.
    23. A device for inspecting a semiconductor device according to claim 17 wherein the electromagnetic wave has a wavelength of 0.01 to 100 nm.
    24. A device for inspecting a semiconductor device according to claim 17 , further comprising: a mirror for soft focusing the soft X-ray emitted from the source of the electromagnetic wave.
    说明书
    [0001]FIG. 1 is a front view of a front of a vehicle wheel according to my novel design; and, FIG. 2 is a perspective view of the front face of a vehicle wheel according to my novel design. The broken lines are for illustrative purposes only and form no part of the claimed design. Also enclosed is a set of photographs of an embodiment of the design.
    同族专利
    暂无同族专利