A comparative study is made of stationary photoconductivity of non-modified, Bi-modified and Ni-modified As2Se3 films. Peculiarities of photoelectric characteristics in As2Se3Ni0.3 films are observed including the effect of low electric fields on the stationary photoconductivity dependences on light intensity and temperature. The experimental results are discussed within a model taking into account a substantial transformation of the localized states spectrum in vitreous As2Se3 mobility gap after modification.

The current-voltage characteristics and spectral distribution of photoresponse of heterojunctions formed on the boundary between crystalline CdTe and amorphous As2S3 were measured. It is shown that crystalline substrate forms (depending on dopping) the layer in amorphous semiconductor enriched with electrons or holes which is acting as an effective injector. It is determined that diffusion current should be taken into account for explanation of the observed current growth at forward voltage.

A comparative study is made of stationary photoconductivity of non-modified and Ni-modified As2Se3 films. Peculiarities of photoelectric characteristics in As2Se3 films are observed including the effect of relatively low electric fields (F = 102 to 103 V cm−1) on the stationary photoconductivity dependences on light wavelength and intensity and on temperature. The experimental results are discussed within a model taking into account a substantial transformation of the localized state spectrum in vitreous As2Se3 mobility gap after modification with nickel. [Russian Text Ignored].

Using statistical poloymer physics, the authors show that, for any polymeric system of molecular chains which have flexibility and intermolecular interactions, there must be a critical temperature T/sub 2/ at which the conformation entropy goes to zero, and a nondegenerate configuration with the lowest free energy corresponding to the ''ground state'' of an amorphous polymer must be found for the system. As a result of the thermomechanical measurements the authors have made on chalcogenide glasses, it is shown that the relationship 1/T /SUB g/ = C/sub 1/ -C/sub 2/ log q can be used to describe the behavior of the thermonuclear glass-transition temperature only over a quite narrow interval of heating rates.

physica status solidi (a)Volume 91, Issue 2 p. 319-337 Review Article Impurity Conduction of Chalcogenide Vitreous Semiconductors† B. L. Gelmont, B. L. Gelmont A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorB. T. Kolomiets, B. T. Kolomiets A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorK. D. Tsendin, K. D. Tsendin A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this author B. L. Gelmont, B. L. Gelmont A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorB. T. Kolomiets, B. T. Kolomiets A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorK. D. Tsendin, K. D. Tsendin A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this author First published: 16 October 1985 https://doi.org/10.1002/pssa.2210910202Citations: 10 † Dedicated to Prof. Dr. Dr. h. c. Dr. E. h. P. Görlich on the occasion of his 80th birthday ‡ Politekhnicheskaya 2, 194 021 Leningrad, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 A. V. Danilov and R. L. Müller, Zh. prikl. Khim. 85, 2012 (1962). 2 B. T. Kolomiets, E. A. Lebedev, and N. A. Rogachev, Fiz. 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Mariani, V. Trnovcová, and D. Ležal, Conf. Amorphous, Liquid, and Glassforming Semiconductors, Part I, Sofia, 1972 (p. 43) (in Russian). 60 D. Ležal, V. Trkal, I. Srb, S. Dokoupil, V. Šmid, and V. Rosicka, Conf. Amorphous, Liquid, and Glassforming Semiconductors (p. 126). 61 E. Mariani, V. Trnovcová, and D. Ležal, phys. stat. sol. (a) 16, K51 (1973). 62 V. Trnovcova, M. Pavlikova, D. Ležal, and E. Mariani, Proc. 6th Internat. Conf. Amorphous Liquid Semiconductors Leningrad, Izd. Nauka, 1976 (p. 279) (in Russian). 63 B. T. Kolomiets, Proc. 6th Internat. Conf. Amorphous Liquid Semiconductors Leningrad (p. 23). 64 B. T. Kolomiets, see [57] (p. 53). 65 B. T. Kolomiets, E. B. Ivkin, and B. V. Listoshin, see [35] (p. 269). 66 A. A. Andreev, E. A. Lebedev, N. A. Rogachev, and V. H. Shpunt, Zh. tekh. Fiz. Pisma 7, 87 (1981). 67 H. Endo, see [47] (p. 1047). 68 M. Yao, S. Hosokawa, and H. Endo, Zh. tekh. Fiz. Pisma (p. 1083). 69 T. Shimizu, Y. Jinno, M. Kumeda, and M. Suzuki, see [62] (p. 103). 70 M. Kumeda, Y. Jinno, M. Suzuki, and T. Shimizu, Japan. J. appl. Phys. 15, 201 (1976). 71 N. Mott and E. Davis, Electronic Processes in Non-Crystalline Materials, Izd. Mir, Moscow 1974 (in Russian) (cf. [14]). 72 N. F. Mott, Phil. Mag. 34, 1101 (1976). 73 N. F. Mott and R. A. Street, Phil. Mag. 36, 33 (1977). 74 R. A. Street and N. F. Mott, Phys. Rev. Letters 35, 1293 (1975). 75 I. Watanabe, Y. Inagaki, and T. Shimizu, J. non-crystall. Solids 22, 109 (1976). 76 J. Robertson, Phil. Mag. B 41, 177 (1980). 77 H. Okamoto and Y. Hamakawa, Solid State Commun. 24, 23 (1977). 78 D. Adler and E. J. Yoffa, Phys. Rev. Letters 36, 1197 (1976). 79 G. G. Roberts and F. W. Shmidlin, Phys. Rev. 180, 785 (1969). 80 T. Uda and E. Yamada, J. Phys. Soc. Japan 46, 515 (1979). 81 P. Nagy, Phil. Mag. B 48, 47 (1983). 82 H. Stötzel and W. Teubner, see [33] (p. 143). 83 H. J. Hoffman, Appl. Phys. A 27, 33 (1982). 84 V. Trnovcova, D. Ležal, J. Doupovec, E. Mariani, and B. Krelova, see [35] (p. 289). 85 I. Watanabe, S. Noguchi, and T. Shimizu, Japan. J. appl. Phys. 22, 575 (1983). 86 S. R. Ovshinsky, see [3] (p. 519). 87 S. R. Ovshinsky and D. Adler, Contemp. Phys. 19, 109 (1978). 88 S. R. Ovshinsky, J. non-crystall. Solids 42, 335 (1980). 89 M. Kastner, Phil. Mag. 37, 127 (1978). 90 H. Fritzsche and M. Kastner, Phil. Mag. 37, 285 (1978). 91 D. Adler, Naturwissenschaften 69, 574 (1982). 92 M. Kastner, D. Adler, and H. Fritzsche, Phys. Rev. Letters 37, 1504 (1976). 93 H. Fritzsche, see [86] (p. 3). 94 E. E. Abdulgafarov and S. E. Abdulgafarov, Proc. Internat. Conf. Amorphous Semiconductors 82, Bucharest, Vol. 3, Central. Inst. Phys., 1982 (p. 157). 95 K. S. Liang, A. Bienenstock, and C. W. Bates, Phys. Rev. B 10, 1528 (1974). 96 S. Laderman, A. Bienenstock, and K. S. Liang, Solar Energy Mater. 8, 15 (1982). 97 T. Gomi, Y. Hirose, T. Kurosu, T. Shiraishi, M. Iida, Y. Gekka, and A. Kunioka, J. non-crystall. Solids 41, 37 (1980). 98 E. A. Davis and E. Mytilineou, Solar Energy Mater. 8, 341 (1982). 99 H. Stötzel, F. Leimer, J. Kuske, and W. Teubner, see [35] (p. 332). 100 A. Kottwitz, H. Stötzel, T. Stoica, and L. Vescan, see [35] (p. 472). 101 A. Kottwitz, J. Kuske, W. Petrova, K. Prokert, H. Stötzel, and W. Teubner, see [33] (p. 175). 102 E. A. Bichkov, Yu. G. Vlasov, and Z. U. Borisova, Fiz. Khim. Stekla 4, 335 (1978). 103 Yu. G. Vlasov and E. A. Bichkov, see [35] (p. 174). 104 A. A. Andreev, Z. U. Borisova, E. A. Bichkov, and Yu. G. Vlasov, Proc. 8th Internat. Conf. Amorphous Liquid Semiconductors, Cambridge, North-Holland Publ. Co., 1979 (p. 901). 105 N. V. Belyakova and Z. U. Borisova, Fiz. Khim. Stekla 10, 238 (1984). 106 T. K. Popova, Yu. S. Tveryanovich, and Z. U. Borisova, Fiz. Khim. Stekla 10, 374 (1984). 107 V. L. Averyanov, B. T. Kolomiets, V. M. Lyubin, and O. Yu. Prikhodko, Zh. tekh. Fiz., Pisma 6, 577 (1980). 108 V. L. Averyanov, B. V. Listoshin, and O. Yu. Prikhodko, see [33] (p. 187). 109 O. Yu. Prikhodko, Avtoreferat Dissert., Univ. Leningrad, 1982. 110 B. T. Kolomiets, V. L. Averyanov, V. M. Lyubin, and O. Yu. Prikhodko, Solar Energy Mater. 8, 1 (1982). 111 B. T. Kolomiets, J. Physique 42, C4-887 (1981). 112 V. L. Averyanov, V. M. Lyubin, F. S. Nasredinov, P. V. Nistiryuk, O. Yu. Prikhodko, and P. P. Seregin, Fiz. Tekh. Poluprov. 17, 353 (1983). 113 V. L. Averyanov, L. P. Kazakova, S. S. Lantratova, E. A. Lebedev, and O. Yu. Prikhodko, Fiz. Tekh. Poluprov. 17, 928 (1983). 114 P. Nagels, L. Tichy, A. Triska, and H. Ticha, see [47] (p. 1015). 115 S. Okano, M. Suzuki, K. Imura, N. Fukada, and A. Hiriki, Fiz. Tekh. Poluprov. (p. 969). 116 V. L. Averyanov, V. M. Lyubin, F. S. Nasredinov, O. Yu. Prikhodko, and P. P. Seregin, see [94] (p. 160). 117 V. L. Averyanov, F. S. Nasredinov, P. V. Nistiryuk, O. Yu. Prikhodko, and P. P. Seregin, Fiz. Khim. Stekla 8, 541 (1982). 118 V. K. Shemetova, A. I. Popov, and N. A. Pivovarova, see [94] (p. 268). 119 V. P. Pinzennik and I. D. Turyanica, Fiz. Khim. Stekla (p. 172). 120 J. M. Chamberlain and M. J. Mosely, J. Physique 42, C4-309 (1981). 121 A. Bornstein, I. Lewin, Y. Lereah, and N. Croitory, Appl. Phys. Letters 41, 866 (1982). 122 B. A. Khan and D. Adler, J. non-crystall. Solids 64, 35 (1984). 123 S. I. Beril, V. L. Averyanov, G. A. Bordovskii, V. M. Lyubin, and B. V. Pavlov, All-union Conf. Ternary Semiconductors and Their Application, Kishinev v, Izd. Shtiintsa, 1983 (p. 234) (in Russian). 124 T. Shimizu, I. Watanabe, and S. Shiomi, Solid State Commun. 38, 483 (1981). 125 B. L. Gelmont and K. D. Tsendin, Fiz. Tekh. Poluprov. 17, 1040 (1983). 126 M. D. Mikhailov and E. A. Karpova, see [94] (p. 106). 127 S. Min, H. Yang, and Z. Chen, J. non-crystall. Solids 52, 181 (1982). 128 D. I. Jones and A. D. Stewart, Phil. Mag. B 46, 423 (1982). Citing Literature Volume91, Issue216 October 1985Pages 319-337 ReferencesRelatedInformation

Thermal and photodissolution of second-group metal zinc is studied. Differences between that and photodissolution of silver are discussed. Influence of zinc doping on physical properties of ChVS films is shown.

The spectral, lux-ampere, temperature, and kinetic photoconductivity characteristics of As2Se3 and a-Si:H thin films are studied. On the basis of the analysis of the data obtained the conclusion is made that the photoconductivity mechanisms are similar. It is supposed that the As2Se3 photoconductivity peculiarities are connected with structural disorder and not with specific chalcogenide vitreous semiconductor defects. [Russian Text Ignored].

Etude de l'influence de la concentration en impuretes (Ni, Cu, Fe, Bi, Sn) sur la bande interdite optique et l'energie d'activation de la conductivite dans As 2 Se 3 . Ce compose vitreux modifie peut etre considere comme un semiconducteur fortement dope et fortement compense

physica status solidi (a)Volume 79, Issue 1 p. K89-K92 Short Note The Effect of Low Oxygen Concentrations on the Photoluminescence of Vitreous Selenium B. T. Kolomiets, B. T. Kolomiets A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorT. N. Mamontova, T. N. Mamontova A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorA. V. Chernyshov, A. V. Chernyshov A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorG. Z. Vinogradova, G. Z. Vinogradova N. S. Kurnakov Institute for General and Inorganic Chemistry, Academy of Sciences of the USSR, MoscowSearch for more papers by this authorN. V. Demokritova, N. V. Demokritova N. S. Kurnakov Institute for General and Inorganic Chemistry, Academy of Sciences of the USSR, MoscowSearch for more papers by this author B. T. Kolomiets, B. T. Kolomiets A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorT. N. Mamontova, T. N. Mamontova A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorA. V. Chernyshov, A. V. Chernyshov A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorG. Z. Vinogradova, G. Z. Vinogradova N. S. Kurnakov Institute for General and Inorganic Chemistry, Academy of Sciences of the USSR, MoscowSearch for more papers by this authorN. V. Demokritova, N. V. Demokritova N. S. Kurnakov Institute for General and Inorganic Chemistry, Academy of Sciences of the USSR, MoscowSearch for more papers by this author First published: 16 September 1983 https://doi.org/10.1002/pssa.2210790160Citations: 1 ul. Politekhnicheskaya 2, 194021 Leningrad, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Citing Literature Volume79, Issue116 September 1983Pages K89-K92 RelatedInformation

The current–voltage characteristics (CVC's) of bulk material Tl2Se · As2Se3 are studied using external voltage pulses of dome-like shape. The samples are ≈︁ 50 μm in thickness. The characteristic properties of the CVC's show a non-linear behaviour and current oscillations before switching. The proposition is made that the preswitching oscillations are possible only if the switching process takes place inside a region of the sample (inside the so-called active part) with different conductivity and threshold parameters than the rest (ballast) part of the sample. The most representative types of CVC are constructed according to the relations between the parameters of the active and ballast parts of the sample. With the use of the experimental data obtained the characteristic size of the inhomogeneities are roughly estimated. [Russian Text Ignored.]

The paper reports on the most interesting studies of the doping, transport, optical and luminiscence properties of chalcogenide vitreous semiconductors (ChVS) and reversible structural transformations in ChVS. Some prospects of applications of ChVS are analyzed.

physica status solidi (a)Volume 80, Issue 2 p. K187-K192 Short Note Plasma-induced processes in chalcogenide vitreous semiconductors P. N. Dashuk, P. N. Dashuk A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorA. V. Kolobov, A. V. Kolobov A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorB. T. Kolomiets, B. T. Kolomiets A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorV. M. Lyubin, V. M. Lyubin A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this author P. N. Dashuk, P. N. Dashuk A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorA. V. Kolobov, A. V. Kolobov A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorB. T. Kolomiets, B. T. Kolomiets A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorV. M. Lyubin, V. M. Lyubin A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this author First published: 16 December 1983 https://doi.org/10.1002/pssa.2210800254Citations: 3 ul. Politekhnicheskaya 2, 194021 Leningrad, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Refernces 1 B. T. Kolomiets and V. M. Lyubin, Mater. Res. Bull. 13, 343 (1978). 2 K. Tanaka, J. non-crystall. Solids 35/36, 1023 (1980). 3 V. L. Averianov, B. T. Kolomiets, V. M. Lyubin, S. I. Nesterov, and V. P. Shilo, Zh. tekh. Fiz. 49, 865 (1979). 4 E. V. Berlin, B. T. Kolomiets, V. M. Lyubin, S. I. Nesterov, and V. V. Rudnev, Zh. tekh. Fiz., Pisma 7, 1526 (1981). 5 P. N. Dashuk and V. M. Lyubin, Zh. tekh. Fiz., Pisma 8, 1357 (1982). 6 P. N. Dashuk and S. L. Kulakov, Zh. tekh. Fiz., Pisma 7, 853 (1981). 7 N. J. Shevchik, M. Cardona, and J. Tejeda, Phys. Rev. B 8, 2833 (1973). 8 J. Bordas and J. B. West, Phil. Mag. 34, 501 (1976). 9 A. N. Zaidel and E. Ya. Shreider, Vacuum Spectroscopy and Its Applications, Izd. Nauka, Moscow 1976 (Chap. 2) (in Russian). 10 B. T. Kolomiets, A. V. Kolobov, V. M. Lyubin, and M. A. Taguirdzhanov, Rev. Roumaine Phys. 26, 839 (1981). Citing Literature Volume80, Issue216 December 1983Pages K187-K192 ReferencesRelatedInformation