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Jae-Hun Jeong | AMiner学者主页 | AMiner

Jae-Hun Jeong

Foundry Div Samsung Elect

43Papers / 论文

1,920Citations / 引用

24H-Index

浏览量66

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论文（43）

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基金项目

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12.4 A 7nm High-Performance and Energy-Efficient Mobile Application Processor with Tri-Cluster CPUs and a Sparsity-Aware NPU

Young Duk Kim,Wookyeong Jeong,Lakkyung Jung,Dongsuk Shin,Jae Geun Song,Jinook Song,Hyeokman Kwon,Jaeyoung Lee,Jaesu Jung,Myungjin Kang,Jaehun Jeong,Yoonjoo Kwon,

Mobile application processors (APs) must be extremely power efficient, while providing high performance for improved user experiences, higher graphic-rendering performance, fancy camera operations, faster data communication, as well as longer battery life [1]-[3]. In this paper, we introduce a power-efficient high-performance 7nm Exynos™ AP processor with tri-cluster CPUs, a sparsity-aware NPU, and a HW auto-clock gating (HWACG) feature.

20202020 IEEE International Solid- State Circuits Conference - (ISSCC)（2020）引用：16

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2A 7nm High-Performance And Energy-Efficient Mobile Application Processor With Tri-Cluster Cpus And A Sparsity-Aware Npu

Young Duk Kim,Wookyeong Jeong,Lakkyung Jung,Dongsuk Shin,Jae Geun Song,Jinook Song,Hyeokman Kwon,Jaeyoung Lee,Jaesu Jung,Myungjin Kang,Jaehun Jeong,Yoonjoo Kwon,

20202020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC)（2020）

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3NONVOLATILE MEMORY DEVICES HAVING A THREE DIMENSIONAL STRUCTURE

Jaehun Jeong,Hansoo Kim,Jaehoon Jang,Hoosung Cho,Kyounghoon Kim

2015引用：25

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4Nonvolatile memory devices having a three dimensional structure utilizing strapping of a common source region and/or a well region

Jaehun Jeong,Hansoo Kim,Jaehoon Jang,Hoosung Cho,Kyounghoon Kim

2015引用：23

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5SEMICONDUCTOR MEMORY DEVICES HAVING SELECTION TRANSISTORS WITH NONUNIFORM THRESHOLD VOLTAGE CHARACTERISTICS

Sunil Shim,Jaehun Jeong,Hansoo Kim,Sunghoi Hur,Jaehoon Jang,Suyoun Yi

2014引用：25

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6Vertically-Integrated Nonvolatile Memory Devices Having Laterally-Integrated Ground Select Transistors

Sunil Shim,Jaehun Jeong,Jaehoon Jang,Kihyun Kim

2014引用：29

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7Non-volatile memory device having vertical structure and method of operating the same

Jaehun Jeong,Hansoo Kim,Wonseok Cho,Jaehoon Jang,Sunil Shim

2013引用：55

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8PROGRAMMING METHODS FOR THREE-DIMENSIONAL MEMORY DEVICES HAVING MULTI-BIT PROGRAMMING, AND THREE-DIMENSIONAL MEMORY DEVICES PROGRAMMED THEREBY

Sunil Shim,Sunghoi Hur,Kihyun Kim,Hansoo Kim,Jaehun Jeong

2013引用：24

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9Semiconductor devices and methods for fabricating the same

Yonghoon Son,Seungjae Baik,Jaehun Jeong, Kihun Hwang

2013引用：23

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10Non-volatile memory devices, operating methods thereof and memory systems including the same

Sunil Shim,Jaehoon Jang,Donghyuk Chae,Youngho Lim,Hansoo Kim,Jaehun Jeong

2013引用：23

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11NONVOLATILE MEMORY DEVICES AND OPERATING METHODS THEREOF

Sunil Shim,Jaehoon Jang,Donghyuk Chae,Youngho Lim,Hansoo Kim,Jaehun Jeong

2012引用：23

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12Three-dimensional memory device

Sunil Shim,Hansoo Kim,Jaehoon Jang,Jaehun Jeong

2012引用：23

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13Semiconductor device having driving transistors

Jongin Yun,Soonmoon Jung,Hansoo Kim,Hoosung Cho,Junbeom Park,Jaehun Jeong

2012引用：23

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14Non-volatile memory device and erase method

Jaehun Jeong,Soonmoon Jung,Hansoo Kim,Jaehoon Jang

2011引用：23

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15Methods of forming semiconductor devices having self-aligned bodies

Jaehun Jeong,Hoon Lim,Soonmoon Jung,Hoosung Cho

2011引用：23

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16VERTICAL NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Sungmin Hwang,Hansoo Kim,Wonseok Cho,Jaehoon Jang,Sunil Shim,Jaehun Jeong,Kihyun Kim

2011引用：35

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173-dimensional flash memory device, method of fabrication and method of operation

Youngchul Jang,Hansoo Kim,Jaehun Jeong,Soonmoon Jung

2011引用：28

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18NON-VOLATILE MEMORY DEVICES HAVING VERTICAL CHANNEL STRUCTURES AND RELATED FABRICATION METHODS

Jaehun Jeong,Hansoo Kim,Wonseok Cho,Jaehoon Jang

2011引用：27

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19Integrated Circuit Memory Devices Having Selection Transistors with Nonuniform Threshold Voltage Characteristics

Sunil Shim,Jaehun Jeong,Hansoo Kim,Sunghoi Hur,Jaehoon Jang,Suyoun Yi

2010引用：52

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20Methods of Forming One Transistor DRAM Devices

Jaehun Jeong,Kinam Kim,Soonmoon Jung,Jaehoon Jang

2010引用：97

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作者统计

合作学者

合作机构

D-Core

合作者
学生
导师

jaehoon jang合作论文数22

Soon-Moon Jung

Soon-Moon Jung合作论文数20

Hansoo Kim合作论文数Korea Atomic Energy Research Institute20

Hoosung Cho合作论文数16

wonseok cho

wonseok cho合作论文数12

sunil shim

sunil shim合作论文数9

hoon lim合作论文数9

Kinam Kim合作论文数Samsung Advanced Institute of Technology8

kyounghoon kim

kyounghoon kim合作论文数5

junbeom park

junbeom park合作论文数5

Kihyun Kim合作论文数Sch Pharm, Sungkyunkwan Univ5

juyoung lim

juyoung lim合作论文数4

dewill chung

dewill chung合作论文数4

byoungkeun son

byoungkeun son合作论文数4

yonghoon son

yonghoon son合作论文数4

Sun Il Shim

Sun Il Shim合作论文数3

jongin yun

jongin yun合作论文数3

sungmin hwang

sungmin hwang合作论文数3

d w kim

d w kim合作论文数3

youngchul jang

youngchul jang合作论文数3

ｌｅｅｊｏｎｇｗｏｏｋ

ｌｅｅｊｏｎｇｗｏｏｋ合作论文数3

Hui-Chang Moon合作论文数samsung3

chulsoon chang

chulsoon chang合作论文数3

Youngseop Rah

Youngseop Rah合作论文数3

Won-Seong Lee合作论文数3

Sung-Hoi Hur

Sung-Hoi Hur合作论文数3

Jae-Joo Shim

Jae-Joo Shim合作论文数3

Younggoan Jang

Younggoan Jang合作论文数3

Jaeyoung Lee

Jaeyoung Lee合作论文数2

suyoun yi

suyoun yi合作论文数2

Y Rah

Y Rah合作论文数2

Young Duk Kim

Young Duk Kim合作论文数2

donghyuk chae

donghyuk chae合作论文数2

Jaesu Jung

Jaesu Jung合作论文数Samsung Electronics, Hwaseong, Korea#TAB#2

Lakkyung Jung

Lakkyung Jung合作论文数Samsung Electronics, Hwaseong, Korea#TAB#2

youngho lim

youngho lim合作论文数2

Hyeokman Kwon

Hyeokman Kwon合作论文数Samsung Electronics, Hwaseong, Korea#TAB#2

Jinook Song

Jinook Song合作论文数Samsung Electronics, Hwaseong, Korea2

Yoonjoo Kwon

Yoonjoo Kwon合作论文数Samsung Electronics, Hwaseong, Korea#TAB#2

jinho kim合作论文数2

Kang Myungjin

Kang Myungjin合作论文数2

Wookyeong Jeong

Wookyeong Jeong合作论文数2

U-In Chung合作论文数2

Jonghyuk Kim合作论文数Center of Excellence for Cybercrimes and Digital Forensics, Naif Arab University for Security Sciences2

Nak Hee Seong合作论文数2

Dongsuk Shin合作论文数the Advanced Integrated Systems Lab., Korea University2

Jae G. Song

Jae G. Song合作论文数2

minsung song

minsung song合作论文数1

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