OBJECTIVE: We aimed to investigate whether PM2.5 has the potential to exacerbate neutrophil airway inflammation and to analyze the underlying mechanisms. MATERIALS AND METHODS: The high-volume air sampler (Laoying 2033B, Qingdao, China) was used to collect PM2.5 from January 01, 2016 to December 21, 2016 in Yantai, Shandong Province, China. BALB/c mice were divided into the following four groups: control group, ovalbumin (OVA) group, low-dose PM2.5 group and high-dose PM2.5 group. Mice except for control group were sensitized and challenged by OVA, and those in low-dose PM2.5 group and high-dose PM2.5 group were intranasally administered by PM2.5 suspension. Airway responsiveness of mice was measured. Enzyme-linked immunosorbent assay (ELISA) kit was used to evaluate the expressions of interleukin 17 (IL-17) and tumor necrosis factor-a (TNF-alpha) in bronchoalveolar lavage fluid (BALF) and serum samples. Cell counting in BALF and histological examination were measured to explore PM2.5-induced airway inflammation. Protein expression of Integrin beta 4 (ITGB4) was assessed by Western blot. RESULTS: Airway hyperresponsiveness (AHR) exacerbated in PM2.5 exposed asthmatic mice in progressively increased doses of acetylcholine chloride (ACH). Levels of IL-17 and TNF-alpha in BALF and serum increased significantly in PM2.5 groups compared with other groups with significant differences between two PM2.5 groups. PM2.5 exposure exacerbated inflammatory cell infiltration and mucus secretion in airways of asthmatic mice. Percentage of neutrophils in PM2.5 groups was significantly higher in a dose-dependent manner. OVA and PM2.5 co-exposure inhibited the expression of ITGB4. In particular, ITGB4 expression in mice of high-dose PM2.5 group was significantly lowered than the low-dose PM2.5 group. CONCLUSIONS: We showed that PM2.5 exposure exacerbates neutrophil airway inflammation in asthmatic mice though up-regulating expressions of IL-17 and TNF-alpha but down-regulating the expression of ITGB4.

OBJECTIVE Non-small cell lung cancer (NSCLC) is the main form of lung cancer, leading to major causes of cancer mortality. It is well known that lncRNAs may be involved in the pathogenesis of cancer, including NSCLC. The aim of this study was to provide a novel therapeutic target of LINC00342 for the therapy of NSCLC. PATIENTS AND METHODS The expression of LINC00342 and miR-203a-3p was detected by quantitative Real Time-Polymerase Chain Reaction (qRT-PCR). Cell proliferation was measured using the MTT assay. Colony formation analysis was performed to count the number of colonies. Cell migration and invasion were measured by transwell. Online software DIANA tools were used to predict binding sites of LINC00342 and miR-203a-3p. Luciferase reporter assay was conducted to confirm the interaction between LINC00342 and miR-203a-3p. RESULTS The expression of LINC00342 was increased in NSCLC tissues and cells compared with normal tissues and cells. Knockdown of LINC00342 suppressed cell proliferation, colony formation, migration, and invasion. LINC00342 regulated the expression of miR-203a-3p by targeting it directly. MiR-203a-3p was down-regulated in NSCLC tissues and cells compared with normal tissues and cells. Furthermore, LINC00342 promoted NSCLC cells proliferation, colony formation, migration, and invasion by depleting the expression of miR-203a-3p. CONCLUSIONS This work implied that LINC00342 functions in NSCLC acting as an oncogene. Briefly, LINC00342 contributes to NSCLC cells growth and metastasis via targeting miR-203a-3p competitively.

OBJECTIVE We aimed at exploring the role of IL-33 in mouse chronic obstructive pulmonary disease and its potential molecular mechanism. MATERIALS AND METHODS The chronic obstructive pulmonary disease (COPD) mice model was established by cigarette smoking (CS). COPD mice were randomly assigned into PBS group and IL-33 antibody group. The peripheral blood and lung tissues of mice from two groups were collected for the following experiments. Pathological changes of the lung tissues in both groups were analyzed by hematoxylin and eosin (HE) staining. IL-33 positive cells in lung tissues were detected by immunohistochemistry. Then, the mRNA and protein levels of IL-33, sST2, ERK and TNF-α in the mice peripheral blood of the two groups were accessed by Real-time polymerase chain reaction (RT-PCR) and Western blot. Finally, the indicators related to oxidative stress, including superoxide dismutase (SOD), malondialdehyde (MDA) and reactive oxygen species (ROS) in the mice serum of two groups were measured. RESULTS After successful construction of COPD mouse model by CS, HE staining illustrated that the structure of airway wall of lung tissue in mice from PBS group was irregular. The ciliated columnar epithelium presented significant degeneration, necrosis and shedding. A large amount of inflammation cell infiltration was observed in vascular tissues. The alveolar epithelial structure was severely damaged and alveolar septum was narrowed and ruptured. Adjacent alveoli were found to be fused into larger cysts. The above pathological changes were relatively better in mice from IL-33 antibody group. Immunohistochemical results demonstrated that IL-33 was remarkably deposited in the lung tissue of PBS group. The mRNA and protein levels of IL-33, sST2, ERK and TNF-α in peripheral blood of PBS group were much higher than those of IL-33 antibody group. At the same time, SOD level in PBS group decreased, while MDA level and ROS production increased. CONCLUSIONS IL-33 aggravates lung injury in COPD mice by increasing inflammation response and oxidative stress, which may serve as a target for predicting and treating COPD.

OBJECTIVE:To investigate the role of IL-9 in chronic obstructive pulmonary disease (COPD), and to explore its potential mechanism.MATERIALS AND METHODS:A mouse COPD model was established by exposure to cigarette smoke. COPD mice were then randomly assigned into two groups, including: the PBS group and the IL-9 antibody group. The above two groups were treated with phosphate-buffered saline (PBS) or IL-9 injection, respectively. The histopathological changes in lung tissues of mice were observed by hematoxylin-eosin (H&E) staining. Immunohistochemistry was performed to detect IL-9-positive (IL-9+) cells in lung tissues. Expression levels of IL-9, sIL-9R, STAT3, and p-STAT3 in peripheral blood of mice were determined by quantitative Real time-polymerase chain reaction (qRT-PCR), enzyme-linked immunosorbent assay (ELISA), and Western blot, respectively. In addition, the expression levels of superoxide dismutase (SOD), malondialdehyde (MDA), and reactive oxygen species (ROS) were detected.RESULTS:H&E staining results showed that the airway wall structure of COPD mice in the PBS group was irregular. Ciliated columnar epithelium exhibited marked degeneration, necrosis and shedding. Besides, numerous inflammatory cell infiltration, narrowing and rupture of the alveolar septa, and larger cysts fused by adjacent alveoli were observed. H&E staining also indicated that the structure of alveolar epithelium was severely impaired in COPD mice. However, the pathological changes in lung tissues of mice in the IL-9 antibody group were much milder than those of the PBS group. Immunohistochemistry results showed a significant deposition of IL-9+ cells in the lung tissues of the PBS group. Meanwhile, the mRNA and protein levels of IL-9, sIL-9R, and p-STAT3 in the PBS group were also remarkably higher than those of the IL-9 antibody group. In addition, SOD content in the PBS group was significantly decreased, whereas the levels of MDA and ROS were significantly increased than those of the IL-9 antibody group.CONCLUSIONS:IL-9 activated STAT3 and aggravated lung injury in COPD mice by increasing inflammatory and oxidative stress.

X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were employed to investigate the effects of the ion beam implantation upon the chemical bonding and the final microstructure in the irradiated polyimide layer. XPS results show an increase of graphite cells with irradiation dose until a threshold is reached. A decomposing approach of data analysis for the experimental Raman spectra further discloses that the implantation parameters, i.e., dose, beam current density, and target temperature, play important but different roles in the formation of the final structure. By the current spectroscopic investigation, a deeper insight has been achieved into the origin of the enhanced conductivity, which shows the conductivity of modified layers are partly, even mainly, determined by their inner established order. This conclusion may serve as a guide in conductive polymer preparations.

Thick silicon on insulator (SOI) wafers have been fabricated by chemical vapor deposition (CVD) after separation by implantation of oxygen (SIMOX) process. The hydrogen annealing effects on epitaxial Si layer were studied. The hydrogen annealing could remove the surface damages of substrate caused by SIMOX process and provide a smoother epitaxial substrate. The number of dislocations and stacking faults in the epitaxial layer decreased remarkably by hydrogen annealing SOI substrate. Meanwhile, compared with other reports, our hydrogen annealing did not degrade the buried oxide layer and top Si layer of SOI substrate.

Hf was deposited onto the surface of Mo grids by ion-beam-assisted deposition. The electron-emission characteristics of the grids with and without Hf, which were contaminated by active electron-emission substances (Ba, BaO) of the cathode, were measured using an analogous-diode method. The surfaces of the grids were analyzed by x-ray diffraction and x-ray photoelectron spectroscopy. The results showed that electron-emission current from the Mo grid coated with Hf film was less than that from the Mo grid without Hf. During the course of the testing, active electron-emission substances from the cathode were deposited continuously onto the surface of the grid. Due to BaHfO3 compounds and Ba-Hf diffusion, the Mo grid coated with Hf effectively reduced the electron-emission substances on the grid from the cathode, which reduced grid electron emission.

A surface-modified carbon nanotubes (CNTs), which shows an excellent electron field emission property was obtained in the present work. Conventional screen-printing technology was applied to prepare the CNT films. After hydrogen plasma surface treating process, the morphology of nanotubes surface were totally changed. Those modified CNTs exhibited low turn-on electron field of 0.98 V/μm, current density of 1 mA/cm 2 at a field of 6.53 V/μm and a very high emission site density of about 10 6 /cm 2 , which is three orders of magnitude higher than that of untreated CNT films. Diode-type prototype devices were obtained which proved the modified CNTs is suitable for field emission displays.

SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI.

Hf was deposited onto molybdenum-grids by ion beam assisted deposition(IBAD) method.Electron emission characteristics from molybdenum-grids coated with and without Hf contaminated by active electron-emission substance of the cathode were measured using the analogous diode method.The results show that electron emission from the grids coated with Hf film is less than that without Hf film,and the mechanism for suppression of electron emission of the grid with Hf film was discussed.

Plasma-enhanced chemical vapor deposition (PECVD) method was employed to grow the Fe-catalyzed carbon nanotubes (CNTs). The grown CNTs with a uniform diameter in the range of about 10–20nm and the typical lengths beyond 1μm resulted in a very high aspect ratio. The Raman and TEM results showed that the grown CNTs contained a large amount of carbonaceous particles and crystal defects, such as pentagon–heptagon pair defects. XPS measurement indicated that the CNTs had CH covalent bonds. Field emission characteristics exhibited the low turn-on threshold field of 2.75V/μm and the maximum emission current density of 7.75mA/cm2 at 6.5V/μm. The growth mechanism of CNTs and the effects of hydrogen plasma on their structure were discussed.

HfNxOy films are deposited by ion beam-assisted deposition on (100) silicon substrates at room temperature. According to X-ray diffraction analysis, at least two phases exist in HfNxOy film, and X-ray photoelectron spectroscopy results are in good agreement with these analysis. Both annealing and increasing assisting ion beam current increase the concentration of the β-Hf7O8N4 phase in HfNxOy films. Field emission with low turn on field is reported. Field emission results suggest that the concentration of β-Hf7O8N4 plays an important role in field emission properties. Hydrogen plasma treatment also enhances field emission properties. These results indicate that the HfNxOy film is an excellent material for field emitter.

Application of SOI in high-power integrated circuit is limited by the self-heating effect, caused by the poor thermal conductivity of the buried SiO2 layers. It is important to investigate new buried insulator with good thermal conductivity. We simulated the self-heating effects of AlN and SiO2 thin films caused by power consumption of SOI devices with the help of ANSYS v6.1. Then prepared AlN thin films through ion beam enhanced deposition (IBED) system. The microstructure and dielectric properties were characterized through AFM, XPS, C–V, I–V and SRP. Our results show that the AlN thin films we prepared have excellent insulating properties and better thermal conductivity compared with SiO2 films.

In this paper, a study on the dry thermal oxidation of a graded SiGe layer is proposed. By oxidation of a graded SiGe layer, the effect of Ge pileup was reduced and dependence of the oxidation ambient was analyzed. During oxidation at pure oxide ambient, pure compositions of silicon dioxide are formed without dislocation, and it was clearly proved by the TEM, EDS, SE, and AFM results. Whereas, after oxidation under atmospheric pressure with 21/min mix gas flow of Ar50%+O/sub 2/50%, composition of SiGeO/sub 2/ was found at the top layer. This result can propose an oxidation method optimization of SiGe/Si heterostructures.

A single-crystalline Si/SiO2/poly-WSix/Sub-Si structure has been successfully fabricated by a new method incorporating a standard smart-cut® technique and a high temperature reaction between tungsten and silicon. Annealing at 800–1100 °C does not only strengthen the bonding of the wafers but also induces solid phase reaction of deposited tungsten and silicon. A poly-crystalline WSix (1 < x < 2) layer with a tetragonal structure is formed below the buried oxide layer. Cross section images of TEM show three steep interfaces of the four layers. It is found that increasing the annealing temperature is in favour of decreasing the sheet resistance of tungsten silicide and improving the crystal quality of the top silicon layer. However, a spreading resistance profile measurement shows that annealing under high temperature (≥1000 °C) will induce diffusion of tungsten into the Si substrate which is confirmed by the EDX results and the reason is presented.

AlN thin films were prepared through IBED. The microstructure and electronic characteristics of AlN films were studied through XPS and C–V/I–V test. N2 gas added into IBED system during deposition could enhance N/Al ratio near to stoichiometrical structure and improve dielectric properties of AlN films. Some important dielectric parameters for AlN thin films were obtained.

The performance of thin film microelectronic devices on SIMOX SOI substrates is highly dependent on the nature and perfection of the top-Si/BOX interfaces. In this research, we demonstrate a non-destructive and in-situ characterization method of spectroscopic ellisometry that is sensitive to these interfacial regions. The dielectric functions of the composite materials in the transition regions were calculated using the effective medium approximation (EMA). In addition, the interfacial roughness was also studied by TEM and AFM.

Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx films deposited at the substrate temperatures from 20 to 180 °C and at the RF powers from 10 to 30 W were investigated. It is found that the films' properties such as density, refractive index, composition and bonding configuration are varied with the substrate temperature and RF power. The moisture resistant ability of the deposited SiNx films was investigated by the water vapor permeation (WVP) measurement. Even at the low substrate temperature such as 50 °C, the moisture resistance of SiNx films keeps quite good. Our results can be applied in Organic Light Emitting Devices (OLED) packaging effectively.

The application of a silicon on insulator device in a high-power integrated circuit is limited by the self-heating effect caused by the poor thermal conductivity of the buried SiO2. We introduce tetrahedral amorphous-carbon thin films formed by reactive filtered arc deposition method, as an alteration. The sp3/sp2 components in the thin films and the surface roughness were measured by spectroscopic ellipsometry, which is a well known non-destructive and in situ characterization method. The dielectric functions of the composite materials were calculated using the Bruggeman effective medium approximation.

ZnO:Zn phosphor thin films, which can be used in field emission displays, were prepared by filtered arc deposition. Depositing parameters, including bias and temperature of the substrates, duct current and partial pressure of O2 in the depositing chamber, were varied to synthesize the films. Both dc and rf bias were utilized in the process. The structure, thickness, luminescent intensity, and morphology of the films were investigated. Most of the as-deposited films contained both crystalline and amorphous phases. It was found that lower bias, lower substrate temperature, rf bias, and lower duct current tended to obtain thicker films. Neither lower nor higher O2 concentration in the chamber obtained thicker films. There are two categories of luminescent peaks, the UV/violet emission (370–420 nm) and the blue/green light (470–530 nm), in the deposited ZnO:Zn films. An interesting relation between PL intensity and morphology was found. Some samples with a special type of individual tip-like structures showed stronger luminescence in a magnitude than others. The forming of the tip structures may be due to the bombarding effect of the plasma with high energy during the deposition and that there were less boundaries or defects between the individual tips may account for the stronger luminescence.