Magnetic multilayers with interlayer exchange coupling have been widely studied for both static and dynamic regimes. Their dynamical responses depend on the exchange coupling strength and magnetic properties of individual layers. Magnetic resonance spectra in such systems are conveniently discussed in terms of coupling of acoustic and optical modes. At a certain value of applied magnetic field, the two modes come close to being degenerate and the spectral gap indicates the strength of mode hybridization. In this work, we theoretically and experimentally study the mode hybridization of interlayer-exchange-coupled moments with dissimilar magnetization and thickness of two ferromagnetic layers. In agreement with symmetry analysis for eigenmodes, our low-symmetry multilayers exhibit sizable spectral gaps for all experimental conditions. The spectra agree well with the predictions from the Landau-Lifshitz-Gilbert equation at the macrospin limit whose parameters are independently fixed by static measurements.

Spin transport characteristics of graphene have been extensively studied so far. The spin transport along the c-axis is however reported by rather limited number of papers. We have studied spin transport characteristics through graphene along the c-axis with permalloy(Py)/graphene(Gr)/Pt by gigahertz (GHz) and terahertz (THz) magnetization dynamics driven by femtosecond laser pulses. The relatively simple sample structure does not require electrodes on the sample. The graphene layer was prepared by chemical vapor deposition and transferred on Pt film. The quality of the graphene layer was characterized by Raman microscopy. Time-resolved magneto-optical Kerr effect is used to characterize gigahertz magnetization dynamics. Magnetization precession is clearly observed both for Pt/Py and Pt/Gr/Py. The Gilbert damping constant of Pt/Py was 0.015, indicating a spin pumping effect from Py to Pt. The Gilbert damping constant of Pt/Gr/Py was found to be 0.011, indicating that the graphene layer blocks spin injection. We also performed the measurement of THz emission for Pt/Py and Pt/Gr/Py. While a THz emission is clearly observed for Pt/Py, a substantial reduction of THz emission is observed for Pt/Gr/Py. With these two different experiments, and highly anisotropic resistivity of graphite, we conclude that the vertical spin transport is strongly suppressed by the graphene layer.

We report in this study the current-induced-torque excitation of acoustic and optical modes in Ta/NiFe/Ru/NiFe/Ta synthetic antiferromagnet stacks grown on SiO2/Si substrates. The two Ta layers serve as spin torque sources with the opposite polarizations in both spin currents and Oersted fields acting on their adjacent NiFe layers. This can create the odd symmetry of spatial spin torque distribution across the growth direction, allowing us to observe different spin-wave excitation efficiency from synthetic antiferromagnets excited by homogeneous torques. We analyze the torque symmetry by the in-plane angular dependence of symmetric and anti-symmetric line shape amplitudes for their resonance and confirm the parallel (perpendicular) pumping nature for the acoustic (optical) modes in our devices, which is in stark contrast to the modes excited by spatially homogeneous torques. We also present our macrospin model for this particular spin-torque excitation geometry, which excellently supports our experimental observation. Our results offer capability of controlling spin-wave excitations by local spin-torque sources, and we can explore further spin-wave control schemes based on this concept.

We have developed a new non-destructive sub-surface interfacial imaging technique. By controlling the penetration depth of the incident electrons, through control of the electron beam acceleration voltage in a scanning electron microscope, we can observe sub-surface interfaces. The voltages for imaging are selected based on Monte Carlo electron flight simulations, where the two voltages have >5% difference between the number of backscattered electrons generated in the layers above and below the buried interface under investigation. Due to the non-destructive nature, this imaging method can be used alongside an applied electrical current and voltage, allowing concurrent observations of the interfacial structures and transport properties, e.g. effective and active junction area, to occur. Magnetic tunnel junctions used in magnetic random access memory have been imaged and the data has been fed back to improve their fabrication processes. Our imaging method is therefore highly useful as both a quality assurance and development tool for magnetic memory and nanoelectronic devices.

Nowadays advanced magnetic tunnel junction applications demand very high tunnel magnetoresistance at room temperature, thus it is quite important to explore high Curie temperatureT(c)half-metallic Heusler alloys. In this article first-principles calculation unveiled that NiCrMnSi has aT(c)of 1200 K comparable to that of traditional Co2MnSi Heusler alloys, even though it does not contain a Co element. In addition, we examined whether NiCrMnSi Heusler phase films can be obtained by magnetron sputtering on MgO substrates. The results of the structural analysis and first-principles calculations indicated that the NiCrMnSi Heusler phase is metastable. A possible route to obtain a metastable NiCrMnSi Heusler alloy is to utilize appropriate templates.

In this work, we study magnon-magnon coupling in synthetic antiferromagnets (SyAFs) using microwave spectroscopy at room temperature. Two distinct spin-wave modes are clearly observed and are hybridized at degeneracy points. We provide a phenomenological model that captures the coupling phenomena and experimentally demonstrate that the coupling strength is controlled by the out-of-plane tilt angle as well as the interlayer exchange field. We numerically show that a spin-current mediated damping in SyAFs plays a role in influencing the coupling strength.

We demonstrate the parametric amplification of an acoustic magnon mode induced by an optical magnon mode in synthetic antiferromagnets, which was achieved by using the all-optical pump-probe time-resolved magneto-optical Kerr effect. The acoustic and optical modes with low and high frequencies, respectively, are clearly observed under different field directions and pump-laser powers. For a relatively high laser power, the acoustic mode shows a temporal increase in amplitude in the time domain; this is observed when the acoustic mode frequency is approximately half the frequency of the optical mode. Correspondingly, we also observe a large enhancement in the spectral density of the acoustic mode in the frequency domain. These data are supported by a numerical simulation using a macrospin model; furthermore, the optical mode amplitude threshold for achieving the acoustic mode amplification is also discussed. The parametric effect in synthetic antiferromagnets demonstrated here can be applied to nanoscale parametric amplifiers and oscillators of magnons, which are the building blocks for spintronic and magnonic computing beyond von Neumann architectures.

Laser pulse induced terahertz (THz) emission from Ta/${({\mathrm{Co}}_{x}{\mathrm{Fe}}_{1\ensuremath{-}x})}_{80}{\mathrm{B}}_{20}$/MgO thin films, with varying compositions $x$ and annealing temperatures, is investigated. With increasing annealing temperature, the THz emission intensity exhibits significant dependence on $x$, with maxima at $x$ of 0.1--0.3. The $x$ dependence of the THz emission originated from the composition dependence of the spin currents induced in ${\mathrm{Co}}_{x}{\mathrm{Fe}}_{1\ensuremath{-}x}$ formed by the crystallization of amorphous CoFeB after the annealing. The origin of the laser-induced spin current is qualitatively discussed in terms of a ballistic transport of hot electrons and a spin-dependent Seebeck effect with different compositions.

Crystal structures were investigated for (001)-oriented tetragonal L1(0)-ordered MnGa epitaxial films with thicknesses of 1-30 nm grown at room temperature on the (001) surface of a CoGa B2-ordered alloy template with magnetron sputtering. All the films showed well-defined remanent magnetization with the magnetic easy axis normal to the film plane at zero magnetic field. The out-of-plane X-ray diffraction results showed that the tetragonal lattice gradually compressed along the [ 001] direction as the film thickness decreased. The reflective high-energy electron diffraction (RHEED) results showed that a morphology for the MnGa thin films became rougher with increasing thickness. The in-plane lattices showed tensile strain in the 1- to 3-nm-thick films, which gradually relaxed to the bulk value with increasing thickness. These results suggested pseudomorphic-like growth of MnGa films on CoGa at the heterointerface of gallides with a lattice mismatch of about -4%. The physics of this growth mode was discussed in terms of Co-Ga-Mn bonding at the heterointerface.

Magnetic materials with low Gilbert damping and low magnetization are necessary for the realization of faster or more energy-efficient spintronic devices based on spin-transfer-torque. Here, we report Gilbert damping in epitaxially grown equiatomic quaternary CoFeMnSi Heusler alloy films. The 10 nm-thick films show a saturation magnetization of Ms = 630 emu cm(-3) and a Gilbert damping constant of alpha = 2.7 x 10(-3), which are relatively small values among transition metal ferromagnets, in addition to its soft magnetic properties. The physical origin of the relatively low damping and the possibility of a further reduction of a to the ultra-low damping regime similar to 10(-4) are discussed in terms of the spin-gapless-like electronic structure and the effect of the chemical order computed from first principles.

Perpendicular magnetic tunnel junctions (p-MTJs) with a MgO barrier and a 1-nm-thick MnGa electrode were investigated by inserting several monolayers (MLs) of Mn. The tunnel magnetoresistance (TMR) ratio systematically increased when increasing the Mn layer thickness with a maximum of 18 (38.4)% at 300 (5) K for a Mn layer thickness of 0.6–0.8 nm. This ratio is five times higher compared to that without the Mn layer. The perpendicular magnetic anisotropy (PMA) field and the PMA constant of the ultrathin MnGa layer also increased up to 62–90 kOe and 6.2–11.3 Merg/cm3, respectively, with an increase in the Mn interlayer thickness, even for the ultrathin regime of the MnGa layer. For p-MTJs showing a high TMR and PMA, electron microscopy indicated the presence of 3–4 MLs of Mn at the MnGa/MgO interface; thus, the Mn modification enhanced the TMR as well as improved the PMA. This may be a promising finding to develop a Mn-based free layer for spin-transfer-torque devices for high-recording-density magnetoresistive random access memory and a sub-THz oscillator/detector.

In this paper, we present the results of our study into current-induced spin-orbit torque (SOT) switching in perpendicularly magnetized CoGa/MnGa/Pt trilayers with different thicknesses of MnGa and Pt. The SOT switching was observed for all films that undergo Joule heating. We also investigate SOT switching in the bottom (CoGa)/MnGa/top(CoGa/Pt) films with different top layers. Although both the bottom and top layers contribute to the SOT, the relative magnitudes of the switching current densities J(C) in the top and bottom layers indicate that the SOT is dominant in the top layer. The J(C) as a function of thickness is discussed in terms of the magnetic properties and resistivity. Experimental data suggested that the MnGa thickness dependence of J(C) may originate from the perpendicular magnetic anisotropy thickness product K-u(eff) t value. On the other hand, J(C) as a function of the Pt thickness shows weak dependence. This may be attributed to the slight change of spin-Hall angle theta(SH) value with different thicknesses of Pt, when we assumed that the SOT switching is primarily due to the spin-Hall effect. (C) 2018 Elsevier B.V. All rights reserved.

L1(0) MnGa is one of the interesting magnetic alloys for spin-transfer-torque based applications because such alloys have high perpendicular magnetic anisotropy, small magnetization, and low Gilbert damping. Magnetic tunnel junctions (MTJs) with ultrathin MnGa electrodes have recently been demonstrated using the room temperature growth technique of MnGa on paramagnetic B2-ordered CoGa templates, which exhibited a small TMR ratio of similar to 3%. To obtain a higher TMR ratio, we systematically investigated the annealing dependence of the TMR ratio with MTJs with 1-5 nm thick MnGa electrodes in this study. The TMR ratios were 2%-3% without annealing, which were the same as those reported previously, and the TMR ratios reached their maximum values of 6%-8% at an annealing temperature of approximately 250 degrees C for the MTJs with 2-5 nm MnGa electrodes. The TMR ratio increased to approximately 25% at 10 K for those MTJs. These TMR ratios were slightly higher than those reported in MTJs with 30 nm-thick MnGa electrodes. The annealing temperature at which TMR showed the maximum value tended to decrease with decreasing MnGa thickness, and this low annealing endurance may be attributed to the atomic mixing between MnGa and barrier/buffer layers. The TMR ratio was discussed in terms of both coherent tunneling based on first principles calculations with different element terminations at the interface and incoherent tunneling.

The magnetization dynamics for ferrimagnets at the angular momentum compensation temperature T_A is believed to be analogous to that for antiferromagnets. We investigated the pulsed-laser-induced magnetization dynamics in amorphous rare-earth transition-metal ferrimagnet films with a T_A just above room temperature. For a low pulse fluence, the magnetization precession frequency decreases as the applied magnetic field increases, whereas for a higher pulse fluence, it increases as the applied field increases. The result was well explained by the left-handed and right-handed precession modes of the antiferromagnetic-like resonance at temperatures below and above T_A, respectively, and the data were in agreement with the theoretical simulation. The study demonstrated the experimental route to achieving antiferromagnetic resonance in ferrimagnets using a pulsed laser.

Magneto-electroluminescence (MEL) effects are observed in single-layer organic light-emitting devices (OLEDs) comprising only macrocyclic aromatic hydrocarbons (MAHs). The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6). The MEL ratio of the resulting OLED is 1%–2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (−1.5% to −2%) in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.