(*) Notice: Subject to any disclaimer, the term of this OTHER PUBLICATIONS patent is extended or adjusted under 35 U.S.C. 154(b) by 1276 days. Tsujimoto, et al., A New Side Wall Protection Technique in Micro wave Plasma Etching Using a Chopping Method, 18" (1986 Inter (21) Appl. No.: 11/044,341 national) Conference of Solid State Devices and Materials, Tokyo, 1986, pp. 229-232. (22) Filed: Jan. 27, 2005 (Continued) (65) Prior Publication Data Primary Examiner Stephen Rosasco US 2006/O1661O7 A1 Jul. 27, 2006 Assistant Examiner—Rashid Alam (74) Attorney, Agent, or Firm Patterson & Sheridan, LLP (51) Int. Cl. GO3F I/00 (2006.01) (57) ABSTRACT (52) U.S. Cl. ........................... 430/5; 430/311:43.0/3.94: 43O/567 (58) Field of Classification Search ..................... 430/5. A method for etching a chromium layer is provided herein. In 430/311; 716/19, 21 one embodiment, a method for etching a chromium layer See application file for complete search history. includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through (56) References Cited a patterned layer, providing at least one halogen containing U.S. PATENT DOCUMENTS process gas to a processing chamber, biasing the layer dis posed on a Substrate Support in the processing chamber with 4,263,088 A 4, 1981 Gorin a plurality of power pulses less than 600 Watts, and etching 4,350,563 A 9, 1982 Takada et al. the chromium layer through a patterned mask. The method 2. A 1 3. E. (E for plasma etching a chromium layer described herein is w s aC 4,504,574 A 3/1985 Meyer et al. particularly Suitable for fabricating photomasks.
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