Integrated technologies represent a key enabling capability for future compact and portable atomic physics systems, including optical clocks and other sensors. In this talk, I will discuss our recent demonstration of high-fidelity detection of the state of a trapped Sr+ ion with a single-photon avalanche detector (SPAD) integrated into a microfabricated surface-electrode trap. Using an adaptive technique, we achieve ion state detection in 450 us with 99.92(1)% average fidelity. I will also discuss ongoing efforts to combine integrated detectors with integrated photonics to enable ion traps that completely eliminate the need for free-space optics for light delivery and collection.

Functional near-infrared spectroscopy (fNIRS) and diffuse correlation spectroscopy (DCS) have shown promise as non-invasive optical methods for cerebral functional imaging. DCS approaches currently have limited sensitivity in adults. fNIRS sensitivity is also limited, particularly in high-detector-density applications. Sensitivity can be improved using temporal discrimination (TD), where the laser excitation is of short (~400ps) duration and the detector rejects early photons that have not penetrated into the brain while maintain high sensitivity to those that have. We report here on the development of a novel 32x32 Single-Photon Avalanche photo-Detector (SPAD) array and Read-Out Integrated Circuit (ROIC) that can operate in either the visible or NIR enabling high-channel-count TD-fNIRS or TD-DCS systems.

We present the design of an innovative instrument for time-gated diffuse correlation spectroscopy. It features a 1064nm pulsed sub-ns long coherence-length laser operating up to 75MHz, a 100-channel in-FPGA correlator and a novel time-gated 32×32 InP/InGaAs-based Single Photon Avalanche Diode (SPAD) array with sub-nanosecond gating capabilities operating up to 10MHz repetition rate. We present components experimental characterization and preliminary validations on a liquid phantom. This testing is informing us for a revision of the photodetector which will allow to reach up to 192 optical channels towards functional blood flow changes measurements with full head coverage.

Arrays of Geiger-mode avalanche photodiodes (GmAPDs) are fabricated on a new type of engineered substrates with an epitaxial layer grown on silicon-on-insulator (SOI) wafers. The SOI-based structure facilitates rapid die-level bump bonding of the GmAPD array to a CMOS readout integrated circuit (ROIC) followed by substrate removal to make a backilluminated image sensor. To fabricate the engineered substrate, a commercial substrate with a 70-nm-thick SOI layer is implanted with BF2 ions to create a p+-doped passivation layer on the light illumination surface. Subsequently, a lightly p-doped silicon layer on which the GmAPD will be fabricated is grown using a homoepitaxy process. This approach allows for the use of chip-level hybridization to CMOS, avoiding the high cost and demanding wafer flatness and smoothness requirements of wafer-scale 3D integration processes. The new process yields cleaner wafers and allows for tighter control of detector layer thickness compared to the previous process. GmAPDs fabricated on 5-μm-thick epitaxial silicon have over 70% photon detection efficiency (PDE) when 532 nm light is focused into the center 3 μm of the device with an oxide layer that remains after substrate removal. With an anti-reflective coating, the PDE can be improved.

Objective: Diffuse correlation spectroscopy (DCS) is an optical technique that allows for the non-invasive measurement of blood flow. Recent work has shown that utilizing longer wavelengths beyond the traditional NIR range provides a significant improvement to signal-to-noise ratio (SNR). However, current detectors both sensitive to longer wavelengths and suitable for clinical applications (InGaAs/InP SPADs) suffer from suboptimal afterpulsing and dark noise characteristics. To overcome these barriers, we introduce a cross correlation method to more accurately recover blood flow information using InGaAs/InP SPADs. Methods: Two InGaAs/InP SPAD detectors were used for during in vitro and in vivo DCS measurements. Cross correlation of the photon streams from each detector was performed to calculate the correlation function. Detector operating parameters were varied to determine parameters which maximized measurement SNR.State-space modeling was performed to determine the detector characteristics at each operating point. Results: Evaluation of detector characteristics was performed across the range of operating conditions. Modeling the effects of the detector noise on the correlation function provided a method to correct the distortion of the correlation curve, yielding accurate recovery of flow information as confirmed by a reference detector. Conclusion: Through a combination of cross-correlation of the signals from two detectors, model-based characterization of detector response, and optimization of detector operating parameters, the method allows for the accurate estimation of the true blood flow index. Significance: This work presents a method by which DCS can be performed at longer NIR wavelengths with existing detector technology, taking advantage of the increased SNR.

Jet Propulsion Laboratory is developing a Europa Lander astrobiology mission concept to search for biosignatures within Europa's subsurface. However, Europa's rugged terrain presents a number of physical hazards for landing. MIT Lincoln Laboratory is designing a radiation-hardened real-time direct-detection LIDAR system at 532nm to aid with autonomous hazard avoidance and landing site selection for this Europa Lander concept. The detector for this system is a 2048x32 array of silicon Geiger-mode APDs and covers the required field-of-view in one dimension, removing the need for 2D stitching and enabling real-time data processing. Detector design, improvements for radiation tolerance and component characterization results are presented.

Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here, we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped Sr^{+} ion via fluorescence collection with the SPAD, achieving 99.92(1)% average fidelity in 450  μs, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.

We present the design of an innovative time-gated 32×32 InP/InGaAs-based Single Photon Avalanche Diode (SPAD) array with sub-nanosecond gating capabilities operating up to 10MHz repetition rate specifically designed for time-domain diffuse correlation spectroscopy at 1064nm. We present the detector design, experimental characterization and preliminary validations on a liquid phantom. This testing is informing us for a revision of the photodetector which will allow to reach up to 192 optical channels towards functional blood flow changes measurements with full head coverage with improved brain sensitivity thanks to early-photons rejection.

We have developed 2048x32 arrays of silicon Geiger-mode avalanche photodiodes (GmAPDs) for a terrain mapping lidar to be used in planetary exploration missions. These devices support single photon detection with sub-ns timing. A key performance-limiting issue with arrays is optical crosstalk, in which hot-carrier light emission produced by an avalanche triggers spurious detection events in nearby pixels. To address this challenge, we have demonstrated a deep trench isolation process. This paper will report measurements of crosstalk between pixels in silicon GmAPD arrays, measurements both before and after the arrays are hybridized to a readout integrated circuit. Initial wafer probe measurements before hybridization show order-of-magnitude crosstalk reduction in a pair of test GmAPDs separated by 25 µm. These measurements use a novel technique based on analysis of the statistics of the time difference between the first detection events during a bias pulse. The results of our measurements are consistent with simulations of optical crosstalk modeled using optical ray tracing software.

I discuss MIT Lincoln Laboratory’s development of integrated photonics and detectors for trapped-ion-array optical clocks, as well as compact, narrow-linewidth lasers to serve as clock oscillators. These technologies will help enable liter-scale, high- performance optical clocks.

Integrated photonic technologies for quantum applications are discussed with emphasis on those supporting trapped-ion-based systems. A long-term vision of a fully integrated trapped- ion chip and current work towards its realization are presented.

Our team has recently shown the SNR and depth-sensitivity advantages of using 1064 nm light for diffuse correlation spectroscopy as well as the challenges of commercially available single-photon detectors at this wavelength. We will review two strategies for custom readout integrated circuit designs that simultaneously target lower pixel dead times and lower afterpulsing probabilities. Both designs use macropixels comprising many detectors, each having a programmable hold-off time. We will compare simulated autocorrelations for our detector models and compare predicted performance against commercial InGaAs/InP detectors.

We have developed a new approach for rapid die-level hybridization of backside-illuminated silicon avalanche photodiode (APD) arrays to CMOS readout integrated circuits (ROICs). APD arrays are fabricated on a custom silicon-on-insulator (SOI) wafer engineered with a built-in backside contact and passivation layer. The engineered APD substrate structure facilitates uniform APD substrate removal by selective etching at the die level after bump bonding. The new integration process has the following advantages over wafer-level 3D integration: 1) reduced cost per development cycle since a dedicated full-wafer ROIC fabrication is not needed, 2) compatibility with existing ROICs that are in chip-format from previous fabrication runs, and 3) accelerated schedule. The new approach is applied to produce 32×32 100-μm-pitch silicon GmAPD arrays. Electrical performance of the APD arrays show 100% pixel connectivity and excellent yield before and after substrate removal.

Over the past 20 years, we have developed arrays of custom-fabricated silicon and InP Geiger-mode avalanche photodiode arrays, CMOS readout circuits to digitally count or time stamp single-photon detection events, and techniques to integrate these two components to make back-illuminated solid-state image sensors for lidar, optical communications, and passive imaging. Starting with 4 × 4 arrays, we have recently demonstrated 256 × 256 arrays, and are working to scale to megapixel-class imagers. In this paper, we review this progress and discuss key technical challenges to scaling to large format.

Over the past 20 years, we have developed arrays of custom-fabricated silicon and InP Geiger-mode avalanche photodiode arrays, CMOS readout circuits to digitally count or time stamp single-photon detection events, and techniques to integrate these two components to make back-illuminated solid-state image sensors for lidar, optical communications, and passive imaging. Starting with 4 × 4 arrays, we have recently demonstrated 256 × 256 arrays, and are working to scale to megapixel-class imagers. In this paper, we review this progress and discuss key technical challenges to scaling to large format.

MIT Lincoln Laboratory has developed lidar systems based on Geiger-mode avalanche photodiodes using both silicon and InGaAs. This technology has enabled terrain mapping and foliage penetration systems with exquisite sensitivity and high area coverage rate.

This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

The detection statistics of Geiger-mode photodetector subarrays with a combination of reset-time blocking loss and optical crosstalk are investigated. Closed-form expressions are obtained for the means and covariances of the numbers of counts in 2 x 2 subarrays (quad cells) used in Shack-Hartmann wavefront sensors. The predicted wavefront sensing precision is compared with that obtained with a charge-coupled device-based wavefront sensor with readout noise. The results of the theory are also used to predict photon transfer curves for the Geiger-mode device and these are compared with experiment.