Creation of controllable narrow-band emission sources for the mid-and long -wavelength infrared ranges is one of the primary tasks of infrared technology. In this paper, we propose and demonstrate non-luminescent (thermal) magnetically controllable sources of infrared emission based on semiconductor magneto-optical photonic structures (MOPS). It is shown that interference effects cause narrow-band thermal emission spectrum of such sources, and magnetic field makes it possible to effectively control the spectral and amplitude characteristics of emissivity in the mid-and long-wavelength infrared range. Influence of the MOPS composition and design on the source emissive characteristics is studied. Using the obtained results, the designs of A3B5 semiconductor compounds based sources with dynamically tunable spectrum and amplitude modulation of emission are proposed. Theoretical modeling has shown the possibility of dynamic control of their emission parameters by achievable magnetic fields. Such sources may be used in environmental monitoring systems, medicine, forensics, infrared spectroscopy, etc.

Specular infrared reflection spectra in the range of “residual rays” of the film and the substrate and in the case of the E⊥c orientation of the electric field have been simulated for the first time for thin MgxZn1−xO films deposited on optically anisotropic 6H-SiC substrates. The simulation was carried out making use of self-consistent parameters obtained earlier for magnesium oxide, zinc oxide, and silicon carbide single crystals. The film thickness and the Mg content x in the film are demonstrated to considerably distort the reflection spectra and to change the reflectivity of the MgxZn1−xO/6H-SiC structure. Using the Kramers–Kronig relation, the spectral intervals, where the reflectivity is sensitive to the film thickness and to the doping levels of the film and the substrate, are determined. The main attention is paid to analyze results obtained for x = 0.2. The existence of surface polaritons in such structures is theoretically demonstrated for the first time, and the attenuated total reflectance surface I(v)/I0(v) is plotted as a three-dimensional representation of the structure transmittance dependence on the radiation frequency and the incidence angle. A possibility to study the resonant interaction of optical phonons with plasmons in the film and the substrate is demonstrated.

Despite the large number of scientific articles devoted to the development of cryogenic resistance thermometers, not many of these thermometers are mass-produced. As is know, semiconductor resistive temperature sensors have low magnetoresistance and high resistance to radiation. The purpose of this work was to manufacture thin (170—190 nm) Ge films on semi-insulating InP substrates, which can be used to create cryogenic resistance thermometers with high temperature sensitivity and relatively low sensitivity to magnetic field that can operate in the 1.5—400 К temperature range. Films of Ge on InP (100) can be used to produce cryogenic resistance thermometers. They have good thermal sensitivity and relatively low magnetoresistance. The films were produced by thermal evaporation of Ge in vacuum (2•10-4 Pa) on semi-insulating InP (100) substrates. The temperature of the InP substrate during film deposition was 310°C, the deposition rate was also constant during sputtering, but varied in the range of 0.03 to 0.06 nm/s for different films. Ge films were p-type conductivity with a resistivity of 0.2—0.3 Ω•cm, hole concentration (3—5)•1018 cm–3 and Hall mobility 6.5—7.5 сm2/(V•s) at room temperature. The quality of the Ge–InP heterostructure was determined by high-resolution X-ray diffraction on a Philips MRD diffractometer. The nanomorphology of the surface of Ge films was studied using the NanoScope IIIa atomic force microscope. The crystal structure of the films is amorphous or polycrystalline with a low level of structural perfection. The effective value of the surface roughness is from 2.25 to 2.60 nm. The obtained resistance values at different temperature in the range of 2—25 K were described by exponential dependence. Corrections in temperature measurement are 5% in a magnetic field of 11 T at a temperature of 4.2 K and 14% in a magnetic field of 14 T at a temperature of 2.2 K. The research results indicate that the obtained films can be used to measure cryogenic temperatures in magnetic fields of up to 14 T.

The influence of rapid thermal annealing (RTA) on structural and optical properties of ZnO multilayer structures co-doped with Tb and Eu ions has been investigated by X-ray diffraction, Time-of-Fligth Secondary Ion Mass Spectrometry, Specular Infrared reflection, micro-Raman and photoluminescence (PL) methods. It is shown that incorporation of rare earth (RE) ions in ZnO host is accompanied by the formation of intrinsic defects in oxygen and zinc sub-lattices of ZnO. The appearance of intense Raman mode at 275 cm(-1) is ascribed mainly to Eu ion incorporation on Zn site in ZnO matrix. The PL of RE ions localized in ZnO and other crystal phases is revealed. The effect of energy transfer from Tb3+ to Eu3+ ions in ZnO is identified. It is shown that the RTA improves crystal structure of ZnO host, i.e. stimulates the increase of coherent domain sizes and strain relaxation, as well as promotes the redistribution of RE ions across the structure. The effect of RTA on RE ion PL depends strongly on the annealing temperature. It is found that RTA at 500 degrees C promotes Eu incorporation into ZnO and the enhancement of Eu3+ PL due to energy transfer from Tb3+ to Eu3+, while RTA at 800 degrees C stimulates segregation of RE ions and the decrease of their PL.

The virus of cattle enzootic leucosis leads to high losses in rural economy, implies forced slaughter of sick animals, loss of the breed, decrease in productivity, violation of reproduction processes in industrial breeding and livestock sector. Among cattle infection diseases, leucosis takes the leading position and comprises 57% of all the other nosological forms, if taking into account severity of injuries in organs, large-scale character of these diseases and economic aftermath. This disease can be transferred from animals to men faring with infected milk. The existing methods for cattle vital diagnostics are long-term and weakly-sensitive (AGID), or very complex and expensive (ELISA and PCR). In this work the alternative method for diagnostics is the method based on the SPR phenomenon was proposed. It has been shown for the first time that the SPR method enables to detect antibodies to cattle leucosis virus in the diluted solution (1 vol.%) of weakly positive blood serum taken from sick animals, which cannot be made using the methods AGID and ELISA - in this case the serum is considered as negative, and the tested animal is considered as healthy, although it is carrier of virus.

Properties of thin films of ternary alloys MgхZn1–хO on the optically-anisotropic Al2O3 substrates in the area of “residual rays” of film and substrate are first investigated using the method of infrared spectroscopy and dispersion analysis of reflection coefficients. It was established that the changes in thickness of film and content of Mg substantially deform the spectrum of reflection in the area of “residual rays” of film and substrate, decrease the reflectivity. First by means of Kramers–Kronig relations with use of the method of dispersion analysis of infrared reflection spectra, the static dielectric constant of MgхZn1–хO structure has been obtained at different values of х, when orientation is Е⊥С. It was ascertained that the MgхZn1–хO/Al2O3 structures are well modelled when using the mutually agreed parameters, obtained earlier for the single crystals of magnesium oxide, zinc oxide and leicosapphire at the orientation Е⊥С. It was theoretically shown and experimentally grounded the assurance of the obtained optical parameters of MgхZn1–хO films by the non-destructive method of infrared spectroscopy in the wide spectral range. The obtained results are well agreed with the literature data.

The influence of disorder at the dielectric constant, as well as at the position of absorption edge in CdP2 has been investigated. The dielectric constant and position of optical absorption edge for the samples with a high concentration of cadmium and phosphorus vacancies as well as samples doped by zinc have been obtained. It was shown that the tailored optical properties can be achieved by variation of the structural disorder in studied samples of CdP2.

The effect of incorporation of the functional groups of aromatic moleculas onto the Si surface has been investigated by photovoltaic (PV) and photoluminescence (PL) characteristics, infrared (IR) spectroscopy, scanning electron microscopy (SEM), and optical microscopy (OM). To realize the organic-inorganic hybrids, the thin (10–100 nm) layers of heteroatom aromatic pharmaceutical drugs (APD) such as clonidine hydrochloride (CLON), procainamide hydrochloride (PRO), and сyanocobalamin (CYCAM – B12 vitamin) were formed by the chemical solution deposition process on the Si patterned surface at room temperature under laboratory ambient conditions. The hybrids have shown: (i) the solar energy conversation with an efficiency up to 6–7% in dependence on the chemical solution media and the surface and interface morphologies; (ii) the highest efficiency of 8.4% in CLON–Si hybrids produced in a mixed solution with a layer 30 nm in thickness and a self-organized net-like surface morphology; (iii) the intense photoluminescence in the waverange of 400–900 nm, luminescence profile, and peak position suggest the vibronic origin of this band; (iv) the presence of characteristic bands associated to the functional groups containing nitrogen (amines NHx (x = 0, 1, 2), amides OCN, cyanonitrile CN), carbon and/or hydrogen-hydrocarbons (CHx (x = 1, 2, 3)), oxygen (hydroxyl OH, peptide CO), halogene (chloroalkane) and phosphorus (phosphate OPO(OH)2). Possible principles of operation of APD–Si hybrids are discussed.

This work is focused on the compositional dependencies in the Raman spectra of amorphous Ge-As-Se and Ge-Sb-Te chalcogenides with the systematic increase of the Ge-content. Studied Ge-As-Se and Ge-Sb-Te chalcogenides are promising for applications in the photonics, optical, and electronic data storages. Gaussians used to fit the obtained Raman spectra were attributed to the vibrations of the structural units in Ge-Sb-Te and Ge-As-Se samples. Systematic compositional dependencies of the intensities of the characteristic Raman bands correlate with evolution of concentration of the different structural units in Ge-Sb-Te and Ge-As-Se alloys along the studied compositional lines. Obtained compositional trends in the intensities of Raman bands may enable one to predict vibrational properties of other amorphous Ge-Sb-Te and Ge-As-Se chalcogenides.

The results of a complex study of C60/Si heterosystems are presented in this work: the crystal structure and composition of the films, internal mechanical stresses, electronic parameters of the film and the film-substrate interface, and the effect of external influences (ultraviolet irradiation, thermal annealing, gamma and microwave irradiation). The advantage of microwave treatment over others is established: the absence of fullerene decomposition, the removal of internal mechanical stresses in the heterosystem, and the improvement of its electronic parameters. Methods for remove the decomposition of C60 molecules under the influence of other treatments have been developed. To eliminate the interaction of fullerenes with oxygen, it was proposed to perform thermal annealing and UV irradiation in vacuum, and in the case of g-irradiation, apply a protective coating on the surface of the film (GeOx or SiOx). In solar cells with C6 films in the polymer matrix on Si, a significant advantage of titanium contacts in comparison with gold is established, especially after microwave treatment. Contact resistance decreased as a result of hybridization of 3d-orbitals of titanium and 2p-orbitals of fullerenes with the formation of ТіхС60 carbides and radiation-stimulated diffusion of metals, which increases the contact area.

Created on the basis of Si, GaAs and C60 fullerenes were low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, calculated were spectral broadening parameters, the energy relaxation time of excited light charge carriers, the energy of quantized levels and the width of the quantum wells.

The influence of Zn/S ratio in the charge on structural and optical properties of ZnS:Mn powders produced by high-temperature self-propagated synthesis was investigated. The samples was shown to consist of mixed-polytypes ZnS crystallites with hexagonal (2H) and cubic (3C) phases, the contribution of the latter increases with the sulfur content in the charge. The most homogeneous size distribution were found at stoichiometric Zn/S ratio. The Zn/S relation affects the Mn incorporation into ZnS lattice. The highest quantity of incorporated Mn is observed at stoichiometric Zn/S relation while lowest one is realized at Zn excess. Besides, the distribution of manganese ions in the blocks, which compose the crystallites, was found to be inhomogeneous, their concentration decreases from crystallites surface to the depth. Mn ions are nearer to the surface in ZnS:Mn synthesized with Zn excess. At Mn concentration in the charge of 1 wt% the shift of ZnS band edge to low energy side is observed, that is ascribed to formation of solid solution ZnS–MnS with lower band gap value.

Nanostructures with germanium films on semi-insulating indium phosphide substrates were prepared by thermal deposition in vacuum of 10 -4 Pa at different film growth rate (0.08-0.675 Ǻ/sec). The substrate thickness was the same for all heterosystems (300 μm). The substrate temperature was about 300 °C (296-312 °C), and was kept constant during the growth of the film. To study heterosystems, a set of experimental methods was used: classical light absorption spectroscopy, modulation electroreflectance spectroscopy, measurement of internal mechanical stresses in a film along the bend of heterosystems measured on a profilometer. The value of the mechanical stresses was also determined from the absorption and electroreflectance spectra. Tails of the density of states in the band gap of germanium films are detected. The value of the characteristic energy Δ and the broadening parameter of the electroreflectance spectrum depended on the manufacturing condition of heterosystems (deposition rate of film and its thickness). The most perfect films were obtained at a higher deposition rate of 0.675 Ǻ/s. Its thickness was 0.67 μm, and the deposition temperature was 296 °C.

Using the IR reflection method and the modified method of disturbed total internal reflection (DTIR), thin undoped conducting ZnO films grown with the use of the atomic layer deposition method have been studied theoretically and experimentally for the first time in a spectral interval of 400–1400 cm−1. The parameters of ZnO films determined from the IR reflection spectra testify to the presence of frequency “windows” in the DTIR spectra, in which surface phonon and plasmon-phonon polaritons are excited. The theoretical calculations are in good agreement with the experimental results. The dispersion dependences of highand low-frequency branches of DTIR spectra are plotted and analyzed.

Nanostructures with C 60 fullerene and carbon composite film were obtained by thermal sublimation in vacuum of microcrystalline C 60 powder onto non heated silicon and cover glass substrates. With increasing deposition rate of fullerenes, they decayed during the growth of the film. Surface and interface of nanostructures were studied using Raman scattering, atomic force microscopy and the modulation spectroscopy method of the electroreflectance. We have found that the deposition rate of the C 60 molecular beam strongly influences on the composition of the films, their crystalline structure and surface morphology. Franz-Keldysh and surface quantum-size effects were observed in nanostructures with fullerenes. The value of the built-in electric field, the energy of the quantum levels and the width of surface quantum well, depending on the heterosystems manufacturing technology, were determined. In heterosystems with carbon films these effects were absent.

Zinc germanium diphosphide (ZnGeP2) is an attractive and promising functional material for different devices of the nano- and optoelectronics. In this paper, dispersion of phonon surface polaritons (PSPs) in ZnGeP2 has been studied in the 200-500-cm(-1) spectral range at 4 and 300 K. Dispersion of "real" and "virtual" PSPs were calculated for C-axis being normal and parallel to the surface. Anisotropy in ZnGeP2 leads to the different numbers of PSP dispersion branches for different orientations of the sample. The temperature-dependent phonon contributions in the dielectric permittivity shift dispersion of the surface polaritons in ZnGeP2 to the higher wavenumbers at 4 K. We have shown that experimental dispersion of PSP is in agreement with theory.

Raman spectroscopy has proven to be a widely used tool for investigation the vibrational properties of diphosphides ZnP2 and CdP2 over a wide range of temperature change. The temperature dependence of the vibrational modes in the diphosphides ZnP2 and CdP2 has been studied by employing Raman spectroscopy in the 3–300K temperature range. The influence of the temperature on the phosphorus chains in ZnP2 and CdP2 manifests on the magnitude of the frequency dependent shift of the Raman peaks at lower temperatures. As addition evidence of this phenomenon we have shown and discussed the correlation between the magnitude of frequency shift and the orientation of the sample.

The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400...1400 cm(-1) for the first time. The frequency "windows" with the obtained excited surface phonon and plasmon-phonon polaritons have been found in the measured infrared reflectance spectra. The dispersion response of high and low frequency branches of the IR spectra have been presented.

After the basic Pekar papers on crystal optics with spatial dispersion (CSD) among a lot of others there was the “dielectric approximation” (DA) method. But soon it has been fully rejected because, as it was recognized by the main group of authors on the theme, it came in conflict with the law of conservation of energy flux through the ideal vacuum-crystal interface. The objective of this paper is to advance a way for rehabilitation of DA method by using indispensable broadening and essential generalization of the expression just for the energy flux density vector (EFDV) at the vacuum-medium interface (the so-called Poynting-Pekar vector in the additional light waves (ALW) theory).

We derive approximate analytical expressions for the effective permittivity tensor of two-phase metamaterials whose geometry is close to one-dimensional (quasi-one-dimensional metamaterials). Specifically, we consider the metamaterial made of parallel slabs with width given by a linear or parabolic function. Using our approach, the design of epsilon-near-zero, ultra-low and high refractive index metallodielectric metamaterials with extended bandwidth has been demonstrated. In addition, generalizations to the three-dimensional case and some limitations of the presented technique are briefly considered.