Uniform and dense CdS-In and CdS-In2O3 (CSIO) thin films are fabricated on silicon (111) and glass substrates via direct current and radio frequency magnetron co-sputtering techniques. The as-prepared thin films are characterized using X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, ultraviolet-visible-near infrared spectroscopy, and a Hall effect measurement system. Experimental results reveal that the CSIO thin films exhibit a preferential orientation along the CdS(002) crystal plane, and all films demonstrate excellent crystalline quality. Specifically, the CSIO thin films achieve a maximum optical transmittance of 77.59%, a carrier concentration elevated to 3.50 & times;1021 cm-3, and an optical band gap of up to 2.90 eV. This study not only provides a highly promising window layer material for the advancement of secondgeneration solar cells but also lays a solid foundation for the innovation of devices in other optoelectronic fields.

The performance optimization of high-sensitivity and low-noise photodetectors critically depends on improving the on/off ratio, which remains fundamentally constrained by defect-mediated carrier recombination in conventional isotropic semiconductors. Newly emerging transition metal trichalcogenides (TMTCs) can effectively enhance anisotropic carrier separation due to their in-plane anisotropic structure, theoretically offering excellent on/off ratio tunability. However, previous optimization strategies tend to regulate complex defect states distribution through techniques such as doping engineering and heterostructure construction, but inevitably introduce deep-level trap states leading to increased dark current. Herein, we propose an optimization strategy that amplifies the on/off ratio by weakening covalency (enhancing ionicity) in ionic bonds, and systematically demonstrate it in TiS3 using a pressure technique. In situ high-pressure photoelectric measurements reveal an unprecedented axis-selective amplification of the on/off ratio, exhibiting a remarkable 14-fold enhancement along the b-axis compared to only 4-fold improvement along the a-axis at 18 GPa. This axial preference stems from the pressure-driven off-a-axis displacement of S-S dimers which weakens covalency of in-plane Ti-S ionic bonds, thereby localizing the electrons along specific crystalline orientation to suppress dark current. Benefiting from the unique pressure response of abnormal resistance increase in TiS3 within a moderate pressure range, our study establishes bond characteristic modulation as an effective approach to improve the on/off ratio. These findings underscore the broad implications of bond engineering for anisotropic materials design toward axisselective performance.

Employing a diamond anvil cell, we measured resistivity and the Hall effect of InAs under pressures of 25 GPa, identifying key structural and electronic phase transitions at 3.8, 7.2, 10.3, and 14.7 GPa. The resistivity minima at 7.2 and 14.7 GPa coincide with structural shifts, while changes between 3.8 and 10.3 GPa indicate electronic transitions, including metallization and semiconductor type inversion. First-principles calculations validate these observations, highlighting the role of pressure in tailoring semiconductor properties, with implications for developing high-performance devices.

We studied the effects of pressure on indium phosphide (InP) semiconductors using powder samples subjected to a pressure range of 0–25 GPa. We analyzed AC impedance, relaxation frequencies, and resistivity at different temperatures to understand how the samples change during metallization. The results showed that increasing pressure mainly affected the electrical transport through the grains, without other substances affecting it. In addition, we found that the phase transition in InP samples could be reversed by releasing pressure. First-principles calculations of InP and the pressure-dependent enthalpy difference revealed a transition from the zinc blende to the Fm3m structure at 4 GPa, accompanied by a 19.5% volume collapse. The study showed that increasing pressure widened the bandgap, increasing resistivity before 4 GPa, and the Fm3m phase became metallic by crossing the Fermi level. Our research shows that pressure can modulate the bandgap and induce structural phase transitions in InP, significantly altering its resistivity and electrical transport properties.

利用射频磁控溅射方法在玻璃和Si(111)衬底上沉积了 CdSe薄膜,并研究了不同溅射压强对薄膜的结构、光学和电学性能的影响.X射线衍射分析表明,所有样品均沿(111)面择优生长,晶粒尺寸随溅射压强的增大而减小.透射光谱分析表明,CdSe薄膜在红外光区域具有较大的透射率,薄膜的带隙随溅射压强的增大表现出先增大后减小的趋势.霍尔效应测试表明,随着溅射压强的增加,电阻率出现先增大后减小的趋势,载流子浓度则出现先减小后增大的趋势.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.

采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明:增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.

SnO 2 –CdO (SCO) films and SnO 2 –CdO–In 2 O 3 (SCIO) films are successfully deposited on Si (100) and glass substrates by radio frequency and direct current magnetron co‐sputtering. The films are characterized by X‐ray diffraction, scanning electron microscope, energy‐dispersive X‐ray spectroscopy, ultraviolet visible near‐infrared spectroscopy, and four‐point probes. SCO films exhibit Cd 2 SnO 4 (011) preferred orientation, and the SCO film deposited at the sputtering power of 80W exhibits excellent crystalline quality and transmittance. The arrangement of clusters changes from sparse to dense when the indium element concentration increases. The resistivities of SCIO films are of two orders of magnitude lower than those of the SCO films. However, the visible light transmittances decrease slightly and the optical bandgap values decrease from 5.00 to 4.85 eV. The results indicate that the indium element plays an important role in improving the electrical properties of SCO films. SCIO films are expected to be a good candidate for transparent conductive films.

采用射频磁控溅射方法在玻璃和Si(111)衬底上制备了碲化镉(CdTe)薄膜,并研究了溅射功率对薄膜的结构、光学和电学性能的影响.X射线衍射分析表明,所有样品均沿(111)面择优取向;平均晶粒尺寸随溅射功率的增加而增加,即从73.0nm(70W)增加到123.6nm(110W).紫外可见近红外光谱分析表明,CdTe薄膜在可见光范围内具有较高的吸光度;薄膜的带隙随着溅射功率的增加而减小,最小值为1.38eV.CdTe薄膜的导电性随溅射功率的增加而明显增强,当溅射功率为110 W时电阻率仅为21.5Ω·cm.该研究结果可为制备高导电性和高吸收率的半导体薄膜提供参考.

采用磁控溅射技术制备了不同原子百分比的CdO-ZnO复合薄膜,并利用X射线衍射仪、扫描电子显微镜、紫外可见近红外分光光度计、四探针电阻测试仪研究了薄膜的结构和光电学特性.研究表明:适量增加CdO掺杂量可提高薄膜在近红外区域的透射率;CdO-ZnO复合薄膜的光学带隙和电阻率随CdO含量的增加而减小,且当CdO和ZnO的原子百分比为4:1时薄膜的带隙和电阻率分别为2.09 eV和10.79×10-3Ω·cm.该研究结果可为制备高导电性和高透过率的薄膜提供参考.

Acoustic focusing with intensity modulation plays an important role in biomedical and life sciences. In this work, we propose a new approach for simultaneous phase and amplitude manipulation in sub-wavelength coupled resonant units, which has not been reported so far. Based on the equivalent impedance and refractive index modulation induced by the change of geometry, arbitrary amplitude response from 0 to 1 and phase shift from 0 to 2π is realized. Thus, the acoustic focusing with intensity modulation can be achieved via waveguide array. Herein, the focal length can be adjusted by alternating the length of supercell, and the whole system can work in a broadband of 0.872f0–1.075f0. By introducing the coding method, the thermal viscosity loss is reduced, and the wavefront modulation can be more accurate. Compared with previous works, our approach has the advantages of simple design and broadband response, which may have promising applications in acoustic communication, non-destructive testing, and acoustic holography.

使用射频磁控溅射技术,以原子百分比为4:1和1:4的SnO2和CdO制备了SnO2-CdO复合薄膜.XRD分析表明,SnO2-CdO(4:1)复合薄膜为SnO2(310)和Cd2 SnO4(011)的混合相多晶结构,且结晶性能良好.随着氧流量的增加,薄膜的择优生长方向由SnO2(310)转变为Cd2 SnO4(011).薄膜在可见光和近红外光范围内的最高透过率达到95％ 和91％,最高平均透过率达到87％ 和85％,光学带隙在3.80～3.90 eV范围内变化.电阻率随着薄氧流量的增加而下降,最低为0.133Ω·cm.薄膜的厚度约为330 nm,其表面由大量分布均匀的球形颗粒组成.原子百分比为4:1的SnO2-CdO复合薄膜的光电性能优于原子百分比为1:4的SnO2-CdO复合薄膜.

利用射频磁控和直流磁控共溅射的方法制备了金属Y掺杂的Mo-N薄膜.对制备的薄膜样品进行元素组成、微观结构、表面形貌、摩擦学性质分析显示:薄膜的择优取向由未掺杂时的γ-Mo2 N(111)改变为Y掺杂后的γ-Mo2 N(200).与未掺杂的Mo-N薄膜相比较,所制备的MoYN薄膜的硬度明显降低,但耐磨性和平均摩擦系数均有所改善.其中Y掺杂含量为9.44at％时,薄膜的耐磨性为最佳,平均摩擦系数为最小(0.283),硬度为(24.13±3.15)GPa.

In the present work, Mn and Al co-doped copper oxide (CuO-Mn:Al) thin films were deposited on Si(100) and ITO glass substrates by radio frequency (RF) and direct current (DC) magnetron co-sputtering, and then the obtained films were annealed at 800 ℃.The crystal structure of films was evaluated by X-ray diffraction.The surface morphology of films was observed by scanning electronic microscope (SEM).Elemental composition of films was determined by energy dispersive X-Ray diffraction (EDX) and X-ray photoelectron spectroscopy (XPS).The resistivity and optical band gap of CuO-Mn:Al thin films were determined by four probe resistance tester and ultraviolet visible near infrared (UV-Vis-NIR) spectrophotometer, respectively.XRD, EDX and XPS results show the perfect doping of Mn and Al into CuO host lattice.The addition of Mn:Al into copper oxide thin films led to the resistivity decreases.In contrast, the optical band gap values increased upon the addition of Mn:Al.

采用磁控溅射法,通过改变氩氮比率,在Si(100)衬底上成功制备了W2N薄膜,当氩氮比率为20:6时薄膜的结晶性最好.为了改善W2N薄膜的力学和摩擦学性能,采用射频和直流磁控共溅射方法分别在Si(100)和A304不锈钢衬底上制备了软质金属Y和硬质金属Cr共掺杂的W2N(Y-Cr:W2N)薄膜.在掺杂功率20～50 W范围内,当掺杂功率为30 W时,薄膜具有最大硬度,为23.71 Gpa,此时样品的弹性模量为256.34 Gpa;当掺杂功率为20 W时,薄膜的平均磨擦系数最小,为0.37.这表明,金属Y和Cr的掺入使W2N薄膜的力学和摩擦学性能有了很大的改善.

The metals (Co, Cu) -doped ZnO: Li films are prepared on Si (100) by using the magnetron co-sputtering method. Using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and vibrating sample magnetometer (VSM), the structure, surface morphology and magnetic properties of the films are measured. All the samples show room temperature ferromagnetism. The saturation magnetization intensity increases from 3.67 emu/cm(3) to 5.78 emu/cm(3), and the coercive force increases from 70Oe to 82Oe after annealing for Co-doped ZnO: Li films. The magnetism does not significantly change before and after annealing for Cu-doped ZnO: Li films.

Co-doped MnxGe1-x (Co-MnxGe1-x) (x = 0.02, 0.1, 0.3) films had been deposited at different sputtering powers on silicon (100) substrates using direct current (DC) and radio frequency (RF) magnetron co-sputtering. The films were characterized by X-ray diffraction (XRD), energy disperse X-ray (EDX), scanning electron microscope (SEM) and vibrating sample magnetometer (VSM). It was shown that the samples with low Mn content had polycrystalline cubic structure with an (220)-preferential orientation. The roughness of samples enhanced with the increase of Co content. In addition, we found that introducing Co can improve the ferromagnetism of the samples when sputtering power is 20 W. At the same time, the Co-MnxGe1-x (80W) films have a stronger ferromagnetic property due to the introduction of substantial Co atoms.

In this work, CrN films were deposited on Si substrates with a Cr buffer layer (CrN/Cr films) by RF magnetron sputtering.The structure, surface morphology, chemical composition, high temperature oxidation resistance and resistivity were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS) and four-probe resist tester, respectively.The lattice constant of the CrN/Cr films with a (111) preferred orientation was estimated to be about 4.1336 Å.After high temperature heat treatment, the surface morphology of CrN/Cr films changed obviously, and the electrical properties of CrN/Cr films were improved.Our results can provide an important reference in the high temperature oxidation resistance research for CrN films.

为研究Ti掺杂的NbN薄膜的机械和摩擦学特性,采用射频和直流磁控共溅射技术制备了Ti掺杂的NbN(Ti:NbN)薄膜.利用X射线衍射仪(XRD)、能量色散X射线光谱仪(EDX)、扫描电子显微镜(SEM)、纳米压痕仪、高温摩擦磨损实验机分别对Ti掺杂的NbN薄膜的微观结构、组成成分、表面形貌、机械和摩擦学性能进行了研究.XRD测试结果显示,薄膜的结晶性随着Ti靶掺杂功率的增加(从0 W逐渐升高到40 W)而呈明显增强趋势,晶粒尺寸也由18.010 nm增加到21.227 nm.当Ti靶的掺杂功率为30 W时,NbN薄膜的硬度由4.5 GPa(未掺杂)增加到20.4 GPa,弹性模量由145.8 GPa(未掺杂)增加到224.5 GPa;当Ti靶的掺杂功率为40 W时,NbN薄膜的摩擦系数由0.73(未掺杂)下降到0.51,磨损率由3.3×10-6 mm3/(N·mm)(未掺杂)下降到2.1×10-6 mm3/(N·mm).这表明,掺杂Ti可使NbN薄膜的机械性能和摩擦学性能得到很大的改善.

Unidirectional reflectionless propagation in a non-Hermitian metamaterial is obtained based on phase coupling between two resonators. The unidirectional reflectionless propagation can be obtained at exceptional point by adjusting polarization angle θ and distance d between two resonators. Moreover, coherent prefect absorptions are obtained near exceptional point with the high absorbance of ∼0.99 and high quality factor of ∼83.