Confronting climate change demands rethinking the scale and scope of global action. This study frames the transition to a net-zero energy system by drawing on historical analogs of monumental projects, such as the Pyramids of Giza and the Apollo Program, to illustrate humanity' capacity for transformative achievements. The analysis introduces the concept of "excess productivity" to contextualize the feasibility of dedicating resources-approximately 1% of global GDP annually-to this effort. Beyond addressing the environmental crisis, the energy transition promises substantial economic, social, and health benefits. Recognizing this as a civilization-defining challenge underscores the need for unprecedented global collaboration to secure a sustainable and equitable future.

Unintentionally formed interfacial layers are ubiquitous in semiconductor devices that operate at extreme conditions. However, these layers' structure and properties often remain unknown due to the thinness of these naturally formed interphases. Here, we report on the intentional epitaxial growth and semiconductor properties of NiGa2O4 spinel layers that form at Ga2O3/NiO interfaces used in high-power and high-temperature electronic devices. Cubic spinel NiGa2O4 films of 10-50 nm thicknesses and low surface roughness ( 2 nm) were grown using pulsed laser deposition at a substrate temperatures in the 300-900 °C range on α-Al2O3 and β-Ga2O3 substrates of different orientation. The optical absorption onset (3.6-3.9 eV) and thermal conductivity (4-9 W m-1 K-1) vary systematically with substrate temperature, consistent with theoretical predictions of varying Ni and Ga cation ordering on the spinel lattice. The valence band offset between NiGa2O4 and β-Ga2O3 is determined to be 1.8 eV. The NiGa2O4-based p-n heterojunction devices on Ga2O3 (001) substrates exhibit a rectification ratio of 10^8 (for +/-2V) and a turn-on voltage of 1.4 V, maintaining diode behavior up to 600 °C. These results highlight the potential of NiGa2O4 as a p-type interlayer in Ga2O3-based devices and shows a new approach to investigate such interfacial layers.

Photovoltaics (PV) represented similar to 70% of newly installed global electricity generating capacity for 2024, continuing a trend of increasing fractional contribution over each of the past 5 years. Year-to-year growth in both PV installations and PV-generated electricity continued at remarkable levels (similar to 32% and similar to 28%, respectively), while grid scale battery storage again demonstrated triple digit fractional growth (113%). The contribution to electricity generation from combined low-carbon sources (hydro, nuclear, wind, and solar) exceeded a new threshold of 40%. Following its initial publication in 2021, this annual article collects information from multiple sources and presents it systematically as a reference for IEEE Journal of Photovoltaics readers.

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors, such as Si, SiC, and III–Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al1−xGdxN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x with x > 0.10–0.15. Experimentally, ferroelectric switching is observed at room temperature in Al1−xGdxN films with x > 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously [Lee et al., Sci. Adv. 10, eadl0848 (2024)]. This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

The potential impact of cation-substituted AlN-based materials, such as Al1-xScxN, Al1-xGaxN, and Al1-xBxN, with exceptional electronic, electromechanical, and dielectric properties has spurred research into this broad family of materials. Rare earth (RE) cations are particularly appealing as they could additionally impart optoelectronic or magnetic functionality. However, success in incorporating a significant level of RE cations into AlN has been limited so far because it is thermodynamically challenging to stabilize such heterostructural alloys. Using combinatorial co-sputtering, we synthesized Al1-xRExN (RE = Pr, Tb) thin films and performed a rapid survey of the composition-structure-property relationships as a function of RE substitution. Under our growth conditions, we observe that Al1-xPrxN maintains a phase-pure wurtzite structure until transitioning to amorphous for x greater than or similar to 0.22. Al1-xTbxN exhibits a phase-pure wurtzite structure until x less than or similar to 0.15, then exhibits mixed wurtzite and rocksalt phases for 0.16 less than or similar to x less than or similar to 0.28, and finally becomes amorphous beyond that. Ellipsometry measurements reveal that the absorption onset decreases with increasing rare earth incorporation and has a strong dependence on the phases present. We observe the characteristic cathodoluminescence emission of Pr3+ and Tb3+, respectively. Using this synthesis approach, we have demonstrated incorporation of Pr and Tb into the AlN wurtzite structure up to higher compositions levels than previously reported and made the first measurements of corresponding structural and optoelectronic properties.

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors such as Si, SiC and III-Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al_1-xGd_xN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x of x> 0.10-0.15. Experimentally, ferroelectric switching is observed at room temperature in Al_1-xGd_xN films with x> 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously (Lee et al., Science Advances 10, eadl0848, 2024). This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

Renewable electricity is growing rapidly, with solar electricity growing relatively faster than any other fuel source in the last ten years. As the world accelerates its transition to clean energy, it is useful to track the rate of growth, but the data are tracked in different ways from different sources. This periodic publication collects data from multiple sources and presents it systematically as a convenient reference for IEEE JPV readers.

To meet greenhouse gas reduction targets and growing energy needs, massive increases in deployment of key technologies-photovoltaics, wind, electrolyzers, and energy storage- are anticipated over the next two to three decades. The unprecedented scale of this ranging from rapid product development cycles and lagging standards to the demand for the highest levels of system performance and reliability. an initial workshop to bring various renewable energy technologies to examine commonalities across technologies, identify areas for synergistic work, and outline a pathway for degradation science to enable a longlasting clean energy economy. connect reliability data at scale, develop cross-cutting methods, to industry standards.

Tetrahedrally bonded III-N and related alloys are useful for a wide range of applications from optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer unique properties for piezoelectrics, ferroelectrics, and other emerging applications. Atomic-scale point defects and impurities can strongly affect the functional properties of materials, and therefore, it is crucial to understand the nature of these defects and the mechanisms through which their concentrations may be controlled in AlN-based alloys. In this study, we employ density functional theory with alloy modeling and point defect calculations to investigate native point defects and unintentional impurities in Al1−xGdxN alloys. Among the native defects that introduce deep midgap states, nitrogen vacancies (VN) are predicted to be in the highest concentration, especially under N-poor growth conditions. We predict and experimentally demonstrate that VN formation can be suppressed in thin films through growth in N-rich environments. We also find that Al1−xGdxN alloys are prone to high levels of unintentional O incorporation, which indirectly leads to even higher concentrations of deep defects. Growth under N-rich/reducing conditions is predicted to minimize and partially alleviate the effects of O incorporation. The results of this study provide valuable insights into the defect behavior in wurtzite nitride-based alloys, which can guide their design and optimization for various applications.

Tetrahedrally-bonded III-N and related alloys are useful for a wide range of applications, from optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer unique properties for piezoelectrics, ferroelectrics, and other emerging applications. Atomic-scale point defects and impurities can strongly affect the functional properties of materials, and therefore, it is crucial to understand the nature of these defects and mechanisms through which their concentrations may be controlled in AlN-based alloys. In this study, we employ density functional theory with alloy modeling and point defect calculations to investigate native point defects and unintentional impurities in Al(1-x)Gd(x)N alloys. Among the native defects that introduce deep mid-gap states, nitrogen vacancies (V_N) are predicted to be in the highest concentration, especially under N-poor growth conditions. We predict and experimentally demonstrate that V_N formation can be suppressed in thin films through growth in N-rich environments. We also find that Al(1-x)Gd(x)N alloys are prone to high levels of unintentional O incorporation, which indirectly leads to even higher concentrations of deep defects. Growth under N-rich/reducing conditions is predicted to minimize and partially alleviate the effects of O incorporation. The results of this study provide valuable insights into the defect behavior in wurtzite nitride-based alloys, which can guide their design and optimization for various applications.

Epitaxial growth of the three-dimensional topological semimetal Cd3As2 on semiconductor substrates enables its use and integration in device applications. Epitaxy also provides an avenue for varying and controlling point defects through modification of the chemical potential during growth. In turn, knowledge of the point defects that are generated in Cd3As2 epilayers will aid the interpretation of electron transport behavior and guide growth efforts to produce material with low defect densities. Point defects in Cd3As2 epilayers grown by molecular beam epitaxy with varying As/Cd flux ratios are probed by positron annihilation spectroscopy. We find that lower As/Cd flux ratios produce higher concentrations of point defects. Remarkably, the measurements indicate that the average defect size is larger than a monovacancy. The data presented here contribute to an evolving picture of vacancy point defects in Cd3As2 and can be used to direct future investigation of the defect-transport relationships in this emerging electronic material.

25% annual PV growth is possible over the next decade.

Beta-phase gallium oxide (β-Ga2O3) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, high temperature power electronics and sensing devices. However, growth of β-Ga2O3 crystals is complicated by easily activated (100) and (001) cleavage planes, the presence of low angle grain boundaries (LAGBs) and twins, and the potential formation of polycrystalline grains. In this study, β-Ga2O3 crystals were grown by the edge-defined film-fed growth technique with an (010) principal face. Two crystals with apparently randomly formed high angle grain boundaries (HAGBs) were selected and analyzed by electron backscatter diffraction, electron channeling contrast imaging, and cathodoluminescence to investigate the nature of the LAGBs and the source of the HAGB formation. It was discovered that planar LAGBs lying parallel to the (010) plane exist in the region immediately preceding the start of an HAGB. Increased misorientation across the LAGB was observed, approaching the initiation of a new grain. We present multimodal microscopy characterization, correlating misorientation and variation in optoelectronic properties with LAGBs and the associated dislocations.

Photovoltaics (PV), also known as solar cells, are now found everywhere-in utility plants; on roofs of homes and commercial buildings; on platforms at sea; in agricultural fields; on vehicles, buildings, drones, and backpacks; and, in their longest running application, providing power in space. Continuous device innovation has led to increased efficiency and improved reliability for multiple PV technologies. Confronted with an urgent need to deploy PV at multiterawatt (TW) scale over the next two decades to mitigate greenhouse gas emissions, PV device innovation takes on new urgency and impact. This perspective reviews recent progress in device design and performance for PV technologies that are currently in commercial production at greater than 1 GW/year or enabling significant space-based power generation-Si, CdTe, CIGS, and multijunction III-V-and looks ahead to the next 5 years. We also identify device-related topics requiring cross-cutting research and innovation.

Photovoltaics (PV), or solar electricity generation, has become the cheapest form of energy in many locations worldwide and, combined with energy storage, has the potential to satisfy most of our electricity needs. PV has grown at an annual compounded growth rate of approximately 30% in the last three decades. Solar energy systems will continue their impressive growth in distributed energy, microgrids, and utility scale, as efforts are made for dependable electricity in an age with increasing extreme weather. However, within this remarkable success lies a new challenge. The growth curve, combined with rapid product innovation and scale up, means that the majority of PV systems are new, without the three years of performance data that have been required in the past to estimate product lifetime. PV reliability has to address this challenge. In this review we present a brief summary of PV reliability starting with brief historical synopsis, detailing some of the technological challenges and present a framework required for long lifetime.

Al1−xGdxN is one of a series of novel heterostructural alloys involving rare earth cations with potentially interesting properties for (opto)electronic, magnetic and neutron detector applications. Using alloy models in conjunction with density functional theory, we explored the full composition range for Al1−xGdxN and found that wurtzite is the ground state structure up to a critical composition of x = 0.82. The calculated temperature-composition phase diagram reveals a large miscibility gap inducing spinodal decomposition at equilibrium conditions, with higher Gd substitution (meta)stabilized at higher temperatures. By depositing combinatorial thin films at high effective temperatures using radio frequency co-sputtering, we have achieved the highest Gd3+ incorporation into the wurtzite phase reported to date, with single-phase compositions at least up to x ≈ 0.25 confirmed by high resolution synchrotron grazing incidence wide angle X-ray scattering. High resolution transmission electron microscopy on material with x ≈ 0.13 confirmed a uniform composition polycrystalline film with uniform columnar grains having the wurtzite structure. Expanding our calculations to other rare earth cations (Pr and Tb) reveals similar thermodynamic stability and solubility behavior to Gd. From this and previous studies on Al1−xScxN, we elucidate that both smaller ionic radius and higher bond ionicity promote increased incorporation of group IIIB cations into wurtzite AlN. This work furthers the development of design rules for new alloys in this materials family.

Perovskite photovoltaics (PVs) are under intensive development for promise in terrestrial energy production. Soon, the community will find out how much of that promise may become reality. Perovskites also open new opportunities for lower cost space power. However, radiation tolerance of space environments requires appropriate analysis of relevant devices irradiated under representative radiation conditions, We present guidelines designed to rigorously test the radiation tolerance of perovskite PVs. We review radiation conditions in common orbits, calculate nonionizing and ionizing energy losses (NIEL and I EL) for perovskites, and prioritize proton radiation for effective nuclear interactions. Low-energy protons (0.05-0.15 MeV) create a representative uniform damage profile, whereas higher energy protons (commonly used in ground-based evaluation) require significantly higher fluence to accumulate the equivalent displacement damage dose due to lower scattering probability. Furthermore, high-energy protons may "heal" devices through increased electronic ionization. These procedural guidelines differ from those used to test conventional semiconductors.

Solar cells are essentially minority carrier devices, and it is therefore of central importance to understand the pertinent carrier transport processes. Here, we advanced a transport imaging technique to directly visualize the charge motion and collection in the direction of relevant carrier transport and to understand the cell operation and degradation in state-of-the-art cadmium telluride solar cells. We revealed complex carrier transport profiles in the inhomogeneous polycrystalline thin-film solar cell, with the influence of electric junction, interface, recombination, and material composition. The pristine cell showed a unique dual peak in the carrier transport light intensity decay profile, and the dual peak feature disappeared on a degraded cell after light and heat stressing in the lab. The experiments, together with device modeling, suggested that selenium diffusion plays an important role in carrier transport. The work opens a new forum by which to understand the carrier transport and bridge the gap between atomic/nanometer-scale chemical/structural and submicrometer optoelectronic knowledge.

To withstand extreme weather, rapid innovation and rock-bottom prices, solar installations need tighter quality control, standards and testing. To withstand extreme weather, rapid innovation and rock-bottom prices, solar installations need tighter quality control, standards and testing.