Fluorescent nanodiamonds (NDs) are new and emerging nanomaterials that have potential to be used as fluorescence imaging agents and also as a highly versatile platform for the controlled functionalization and delivery of a wide spectrum of therapeutic agents. We will utilize two experimental methods, TIRF, a relatively simple method based on total internal reflection fluorescence and SPRF, fluorescence enhanced by resonance coupling with surface plasmons. We estimate that the SPRF method will be 100 times sensitive than currently available similar detectors based on detectors. The ultimate goal of this research is to develop microarray platforms that could be used for sensitive, fast and inexpensive gene sequencing and protein detection.

Fluorescent nanodiamonds (FNDs) are one of the new and very promising biocompatible nanomaterials that can be used both as a fluorescence imaging agent and a highly versatile platform for controlled functionalization to target and deliver a wide spectrum of therapeutic agents. Among the remarkable fluorescence properties are excellent photostability, emission between 600-700nm, quantum yield of 1 and moderately long fluorescence lifetimes. However the low absorption cross section of fluorescent (N-V)(-) centers limits FNDs' brightness. In this work we show that an approach based on the Forster resonance energy transfer (FRET) may significantly enhance the fluorescence signal observed from a single ND. We demonstrate that organic dyes (fluorophores) attached to the FND surface can efficiently transfer the excitation energy to (N-V)(-) centers. Multiple dyes positioned in close proximity to the ND facile surface may serve as harvesting antennas transferring excitation energy to the fluorescent centers. We propose that, with the help of some of the functional groups present on the FND surface, we can either directly link flurophores or use scalable dendrimer chemistry to position many organic dyes at a calibrated distance. Also, the remaining multiple functional groups will be still available for particle targeting and drug delivery. This opens a new way for designing a new type of theranostics particles of ultrahigh brightness, high photostability, specific targeting, and high capacity for drug delivery.

Positronium annihilation has been used to measure pore diameters in silica sol-gels. The results have been compared to those obtained from the BET technique. Pore development in the presence of chemical additives and during the thermal treatment has been studied. A model relating positronium lifetime to the pore size has been proposed.

SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100°C and 1350°C. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The surface of the SiC nanowires is covered by an amorphous layer composed of amorphous SiC and various carbon and silicon compounds. The objective of the research was to modify the surface structure of the SiC nanowires, a step necessary for future surface functionalization. The acid etched nanowires were analyzed using FTIR, TEM, x-ray diffraction, and photoluminescence. The concentration of Si-Ox groups in untreated specimens was estimated to account for 1% of the total mass of a 2 nm thick amorphous layer wrapping around all structures. After treatment in HF this concentration was negligibly small. TEM images show that after treatment the amorphous layer was removed but the diameter of the core remained unchanged. The surface was roughened and multiple pits formed on that surface. X-ray line broadening analysis indicates a significant contribution due to stress caused by dislocations and planar faults. After acid etching line narrowing was observed and attributed to stress reduction and elimination of the smallest wires. The photoluminescence signal from as received samples was very weak but increased greatly after acid treatment, indicating that the signal is related to surface defects. Measurements at low temperatures, 8 K, showed peaks due to point and planar defects.

As the field of biotechnology expands and the semiconductor industry approaches the limit of size reduction with conventional materials, these and other fields will increasingly rely on nanomaterials with novel properties. Silicon carbide (SiC) possesses many properties that make it appealing to research and industry: a large band gap, high hardness, high strength, low thermal expansion, chemical inertness, etc. It is known that silicon carbide nanowires can be synthesized through a reaction between silicon vapor and multiwalled carbon nanotubes. This process was refined to produce smaller, straighter nanowires. This was done by analyzing the dependence of the reaction rate on the partial vapor pressure of silicon. The reaction rate was studied by comparison of SiC and multiwalled carbon nanotubes peak intensities in X-ray diffractograms, which produced an estimate of the respective reactions' SiC yields. The particle morphologies were then analyzed with transmission electron microscopy. Finally, Fourier transform infrared spectroscopy was utilized to study the intensities and frequencies of the SiC infrared absorption bands. This data was analyzed with respect to the previously determined yield and particle sizes of the respective SiC nanowire samples.

In this paper, we report multi-step processes for the fabrication of Er3+-doped SiGe nanowires (NWs) and characterization of their emissive properties. Three different alloyed architectures are obtained by altering the deposition sequences of Si and Er3+ on a Ge core NW, each involving a fixed concentration of these three elements. The deposition of Si onto the Ge NW core, followed by an Er3+-rich layer on the outermost surface, permits facile formation of a SiGe alloy given the lack of an erbium diffusion barrier; yet clustering of the erbium centers on the NW surface produces the weakest emitter. For nanowires prepared by co-depositing Si and Er3+ on top of the Ge core, the presence of impurity Er3+ ions greatly reduces the alloying rate of Si and Ge such that less Si can diffuse into the Ge core. For this structure, the reduction of Er-Er interactions by a polycrystalline Si shell results in the strongest emission at 1540 nm. If an Er3+ layer is inserted between the Ge and Si layers (a sandwich structure), it is found that Er3+ ions diffuse preferentially into the SiGe core instead of the silicon-rich shell, with a correspondingly weaker luminescence intensity. A combination of high resolution transmission electron microscopy, energy dispersive X-ray mapping, micro-Raman spectroscopy, and photoluminescence spectroscopy are employed to derive these conclusions.

Silicon carbide nanowires were produced from carbon blacks at 1473 K and their microstructure was characterized by TEM, X-ray diffraction, FTIR and Raman spectroscopy. Nanowires of uniform diameters, the smallest averaging 10 nm, and narrow size distribution were obtained from graphitized carbon blacks, and their morphology depends on the properties of carbon black pecursors. High concentration of stacking faults and twins was detected. In addition to silicon carbide nanowires, a silicon carbide layer, about 20 nm thick, was formed on the surface of carbon black aggregates. The interior of the aggregates did not react and analysis of the data showed that it is composed of a mixture of amorphous carbon and small graphitic crystallites. The small lateral sizes of these crystallites remain unchanged during the graphitization process which is limited to the outer layer of the aggregates.

Diamond compacts were sintered from nano-size diamond crystals at high pressure, 8 GPa, and temperature above 1500 °C for very short times ranging from 5 to 11 s. Structure and mechanical properties of the compacts have been characterized. Although we have not completely avoided graphitization of diamonds, the amount of graphite produced was low, less than 2%, and despite relatively high porosity, the compacts were characterized by high hardness, bulk and Young moduli.

Diamond–silicon carbide composites were sintered at 10 GPa and three different temperatures: 1600, 1800, and 2000 °C. Distributions of residual surface stresses in diamond crystals were obtained by the analysis of Raman band shifts and splitting. It was noted that stresses concentrate around points of contacts between diamond crystals. Average stress increase with increasing sintering temperature. Complementary information on average sizes of crystallites, concentration of stacking faults, and population of dislocations in both diamond and SiC were obtained from X-ray diffraction profile analysis. It was observed that for both diamond and silicon carbide phases the average crystallite sizes decrease. The population of dislocations in the diamond phase increases with increasing sintering temperature and the population fluctuates in the SiC phase. Concentration of stacking faults was significant only in SiC.

Nanosize diamond–silicon carbide composites have been sintered at high temperatures and a fixed pressure of about 8GPa. Crystallite size, densities of stacking faults and dislocations in diamond and silicon carbide crystallites are determined by X-ray diffraction profile analysis. It has been shown that crystallite sizes increase while population of stacking faults and dislocations decrease with temperature increasing from 1820°C to 2320°C. These conclusions indicate that to produce composites with small residual stresses the sintering process should be conducted at the highest possible temperatures.

SiC nanowires were obtained by a reaction between vapor silicon and multiwall carbon nanotubes, CNT, in vacuum at 1200 degrees C. Raman and IR spectrometry, X-ray diffraction and high resolution transmission electron microscopy, HRTEM, were used to characterize properties of SiC nanowires. Morphology and chemical composition of the nanowires was similar for all samples, but concentration of structural defects varied and depended on the origin of CNT. Stacking faults were characterized by HRTEM and Raman spectroscopy, and both techniques provided complementary results. Raman microscopy allowed studying structural defects inside individual nanowires. A thin layer of amorphous silicon carbide was detected on the surface of nanowires.

Raman spectroscopy and x-ray diffraction whole profile analysis were used to analyze strain in diamond crystals in diamond-silicon carbide composites. The composites were obtained by the infiltration technique from diamond and silicon powders at 8 GPa and 2173 K. Frequency shifts of Raman peak of diamond were used to calculate residual stress and then to draw maps of stress distribution on the surface of diamonds. Large stresses were formed near contact points between diamond crystals. Analysis of profiles of three x-ray reflections of diamond provided information on dislocations and crystallites sizes. After sintering crystallites which scattered x-ray coherently had small sizes which depended on the dimensions of diamond crystal used in the sintering process.

SiC nanowires were produced from carbon nanotubes and silicon by two different methods at high temperature. X-ray powder diffraction was used to determine SiC concentration. The reaction rate using the Avrami–Erofeev method was determined for samples sintered at temperatures ranging from 1313 to 1823 K. The activation energy was found to be (254 ± 36) kJ mol−1. The limiting factor in SiC formation is diffusion of silicon and carbon atoms through the produced layer of SiC.

The Wilson method was applied for determination of the thermal atomic motions in micro- and nano-crystalline SiC. Limitations of application of this method to examination of complex materials with atoms vibrating with more that one amplitude were discussed. It is shown that a unique interpretation of Wilson plots for crystals with more than one type of atoms and weak vibration component(s) requires measurements performed up to a very large diffraction vector Q (>25 Å–1). Atomic vibrations in microcrystalline SiC were evaluated based on the diffractograms calculated for models built assuming different mean square atomic displacements (vibration amplitudes) of the component atoms. For nanocrystalline SiC two different temperature atomic factors which describe vibrations of the atoms in the grain interior (B core) and at its surface (B shell) were determined.