Nourbakhsh Amirhasan

imec, Kapeldreef 75, B-3001 Leuven, Belgium. Department of Chemistry, KULeuven, Celestijnenlaan 200f, B-3001 Leuven, Belgium.

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Subthreshold swing improvement in MoS transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO/HfO gate dielectric stack

Amirhasan Nourbakhsh,Ahmad Zubair,Sameer Joglekar,Mildred Dresselhaus,Tomás Palacios

Nanoscale, no. 18 (2017): 6122-6127

Cited by17WOSBibtex

Highly efficient and stable MoS 2 FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating

César J Lockhart de la Rosa,Amirhasan Nourbakhsh, Markus Heyne,Inge Asselberghs,Cedric Huyghebaert,Iuliana Radu,Marc Heyns,Stefan De Gendt

Nanoscale, no. 1 (2017): 258-265

Cited by6WOSBibtex

Scaling and carrier transport properties of monolayer MoS$_{2}$ transistors

Amirhasan Nourbakhsh,Ahmad Zubair,Redwan N. Sajjad, Amir Tavakkoli,Xi Ling,Mildred S. Dresselhaus,Jing Kong,Karl K. Berggren,Dimitri A. Antoniadis,Tomas Palacios

Bulletin of the American Physical Society, (2017)

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Graphene-on-GaN Hot Electron Transistor

Ahmad Zubair,Amirhasan Nourbakhsh,Jin-Yong Hong,Yi Song,Meng Qi,Debdeep Jena,Jing Kong,Mildred S. Dresselhaus,Tomas Palacios

Bulletin of the American Physical Society, (2017)

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Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter

Ahmad Zubair,Amirhasan Nourbakhsh,Jin-Yong Hong,Meng Qi,Yi Song,Debdeep Jena,Jing Kong,Mildred S. Dresselhaus,Tomas Palacios

Nano Letters, no. 5 (2017): 3089-3096

Cited by13Bibtex

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

Amirhasan Nourbakhsh,Ahmad Zubair,Redwan N. Sajjad,K G Amir Tavakkoli,Wei Chen, Shiang Fang,Xi Ling,Jing Kong,Mildred S. Dresselhaus,Efthimios Kaxiras,Karl K. Berggren,Dimitri A. Antoniadis

Nano Letters, no. 12 (2016): 7798-7806

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Serially connected monolayer MoS 2 FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

Amirhasan Nourbakhsh,Ahmad Zubair, A. Tavakkoli,Redwan N. Sajjad,Xi Ling,Mildred S. Dresselhaus,Jing Kong,Karl K. Berggren,Dimitri A. Antoniadis,Tomas Palacios

symposium on vlsi technology, pp.1-2, (2016)

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Transport Properties of a MoS2/WSe2 Heterojunction Transistor and its Potential for Application

Amirhasan Nourbakhsh,Ahmad Zubair,Mildred S Dresselhaus,Tomás Palacios

Nano letters, (2016)

Cited by152WOSBibtex

Electrical and optical properties of SnS$_{\mathrm{2}}$/WSe$_{\mathrm{2}}$ van der Waals Heterojunction FETs

Ahmad Zubair,Amirhasan Nourbakhsh,Mildred S. Dresselhaus,Tomas Palacios

Bulletin of the American Physical Society, (2016)

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Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

Amirhasan Nourbakhsh,Tarun K Agarwal,Alexander Klekachev,Inge Asselberghs,Mirco Cantoro,Cedric Huyghebaert,Marc Heyns,Marian Verhelst,Aaron Thean,Stefan De Gendt

Nanotechnology, no. 34 (2014): 345203-345203

Cited by3WOSBibtex

Graphene Transistors and Photodetectors

Alexander V. Klekachev,Amirhasan Nourbakhsh,Inge Asselberghs,Andre Stesmans,Marc Heyns,Stefan De Gendt

The Electrochemical Society interface, no. 1 (2013): 63-68

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Nourbakhsh AmirhasanBinding

Papers11 papers

Nourbakhsh Amirhasan