基本信息
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职业迁徙
个人简介
Song Bai received the B.S. degree in physics from Peking University, Beijing, China, in 1997, and the Ph.D. degree in physics from the University of Pittsburgh, Pittsburgh, PA, USA, in 2003. In 2004, he joined the Nanjing Electronic Devices Institute, where he currently heads research on SiC power device development with the State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices. He is the author or coauthor over 30 publications and holds more than ten patents. His present research interests are in developing high-voltage power devices of wide-bandgap semiconductors.
研究兴趣
论文共 118 篇作者统计合作学者相似作者
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IEEE ELECTRON DEVICE LETTERSno. 4 (2024): 542-545
IEEE transactions on electron devices/IEEE transactions on electron devicesno. 2 (2024): 1018-1023
IEEE Electron Device Letterspp.1-1, (2024)
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)pp.57-60, (2023)
IEEE electron device lettersno. 12 (2023): 1991-1994
IEEE transactions on electron devices/IEEE transactions on electron devicesno. 11 (2023): 6086-6092
Hang Chen,Yourun Zhang, Peng He, Yuqiao Zhang,Shaohua Chen,Shiyan Li,Maojiu Luo,Zehong Li,Song Bai,Bo Zhang
IEEE transactions on electron devices/IEEE transactions on electron devicesno. 7 (2023): 3813-3819
MICRO AND NANOSTRUCTURES (2023)
Journal of crystal growth (2023): 127059-127059
2023 IEEE PELS Students and Young Professionals Symposium (SYPS)pp.1-5, (2023)
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作者统计
#Papers: 118
#Citation: 496
H-Index: 12
G-Index: 18
Sociability: 6
Diversity: 3
Activity: 23
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