基本信息
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职业迁徙
个人简介
Eugene A. Emelyanov was born in 1986 in Novosibirsk, Russia. Have graduated from Novosibirsk State Technical University in 2008. Since 2005 he has been working in A.V. Rzhanov Institute of Semiconductor Physics, SB RAS. Now he is Junior Researcher of Laboratory of physical basis of epitaxy of semiconductor heterostructures.
研究兴趣
论文共 33 篇作者统计合作学者相似作者
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Demid S. Abramkin,Mikhail O. Petrushkov, Dmitrii B. Bogomolov,Eugeny A. Emelyanov,Mikhail Yu. Yesin,Andrey V. Vasev,Alexey A. Bloshkin, Eugeny S. Koptev,Mikhail A. Putyato,Victor V. Atuchin,Valery V. Preobrazhenskii
Pisʹma v Žurnal tehničeskoj fizikino. 2 (2023): 26-26
Fizika i tehnika poluprovodnikovno. 10 (2022): 761-761
Novosibirsk State University,Petrushkov M. O.,Emelyanov E. A.,Yesin M. Yu.,Vasev A. V.,Putyato M. A., Bogomolov D. B.,Preobrazhenskiy V. V.
Petrushkov M. O., Novosibirsk State University,Emelyanov E. A.,Putyato M. A.,Vasev A. V.,Loshkarev D. I.,Yesin M. Yu.,Komkov O. S.,Firsov D. D.,Preobrazhenskii V. V.
Lobachevsky State University of Nizhny Novgorod,Fadeev M. A.,Krishtopenko S. S.,Semyagin B. R.,Putyato M. A.,Emelyanov E. A.,Preobrazhenskii V. V.
Nastovjak A. G., Novosibirsk State Technical University,Emelyanov E. A.,Petrushkov M. O.,Vasev A. V.,Putyato M. A.,Preobrazhenskii V. V.
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作者统计
#Papers: 33
#Citation: 112
H-Index: 6
G-Index: 9
Sociability: 5
Diversity: 2
Activity: 4
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