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Juan Rivas is an Associate Professor at Stanford’s Electrical Engineering department. Before, he worked for GE Global Research in the high-frequency power electronics group. He has extensive experience in the design of dc-dc power converters working at MHz frequencies. He has published peer-reviewed work on power converters reaching up to 100 MHz using Si and WBG devices. He obtained his doctoral degree from MIT in 2006. His research interests include power electronics, resonant converters, resonant gate drive techniques, high-frequency magnetics, and finding new applications for power converters.
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2024 IEEE Applied Power Electronics Conference and Exposition (APEC) (2024)
IEEE Microwave Magazineno. 6 (2024): 88-92
IEEE OPEN JOURNAL OF POWER ELECTRONICS (2024): 286-294
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)pp.595-599, (2024)
IEEE TRANSACTIONS ON POWER ELECTRONICSno. 2 (2024): 2478-2488
2024 IEEE Applied Power Electronics Conference and Exposition (APEC) (2024)
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)pp.1790-1793, (2024)
crossref(2024)
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)pp.1604-1607, (2024)
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)pp.1560-1565, (2024)
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