基本信息
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Career Trajectory
Bio
Masaru Sato (Member, IEEE) received the M.E. degree in electrical engineering from Tohoku University, Sendai, Japan, in 1999, and the Ph.D. degree in electronics and applied physics from the Tokyo Institute of Technology, Tokyo, Japan, in 2014.
He joined Fujitsu Laboratories Ltd., Atsugi, Japan, in 1999, where he has been engaged in research on high-speed InP-based high-electron mobility transistor (HEMT) circuits for fiber-optic communication systems and millimeter-wave integrated circuits. From 2009 to 2010, he was with the Georgia Institute of Technology, Atlanta, GA, USA, where he researched high-speed analog CMOS circuit. His current research interest includes the development of microwave and millimeter-wave monolithic microwave-integrated circuits (MMICs).
Dr. Sato was a recipient of the Young Researcher’s Award from IEICE in 2006.
Research Interests
Papers共 121 篇Author StatisticsCo-AuthorSimilar Experts
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2024 IEEE RADIO AND WIRELESS SYMPOSIUM, RWSpp.122-125, (2024)
IEICE transactions on electronicsno. 10 (2023): 605-613
IEICE transactions on electronicsno. 11 (2023): 661-668
IEEE journal of the Electron Devices Society (2023): 101-106
2022 Asia-Pacific Microwave Conference (APMC) (2022)
Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura,Atsushi Yamada,Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha,Junji Kotani,Masaru Sato, Takao Ohki
openalex(2022)
IEEE transactions on components, packaging, and manufacturing technologyno. 11 (2021): 1909-1916
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Author Statistics
#Papers: 120
#Citation: 1412
H-Index: 23
G-Index: 29
Sociability: 5
Diversity: 1
Activity: 1
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