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Vinayakprasanna N. Hegde received the M.Sc. degree in physics from the University of Mysore, Mysore, India, where he is currently pursuing the Ph.D. degree and a Research Scholar with the Department of Studies in Physics. His main research focus on reliability physics, radiation effects on silicon-germanium heterojunction bipolar transistors, and simulation studies.
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论文共 103 篇作者统计合作学者相似作者
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CHEMICAL PHYSICS IMPACT (2024): 100474
Journal of Science: Advanced Materials and Devicesno. 3 (2024): 100733
Madhura N. Talwar,Akshatha Gangadhar,Mathankumar Manoharan, R. Manimozhi, S. Srikantaswamy, R.T. Rajendra Kumar,A.P. Gnana Prakash
Materials Science in Semiconductor Processing (2024): 108255
Madhura N. Talwar,Akshatha Gangadhar,Mathankumar Manoharan, R. Manimozhi, S. Srikantaswamy,R. T. Rajendra Kumar,A. P. Gnana Prakash
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)
Materials Chemistry and Physicspp.129518, (2024)
Inorganic Chemistry Communicationspp.112562, (2024)
Nuclear and Particle Physics Proceedings (2023): 37-40
ADVANCES IN MATERIALS AND PROCESSING TECHNOLOGIESpp.1-19, (2023)
Nuclear and Particle Physics Proceedings (2023): 106-109
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