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个人简介
P. T. Lai received the B.Sc. (Eng.) degree from the University of
Hong Kong, Hong Kong, in 1981, and the Ph.D. degree in the design of small-sized MOS transistor with emphasis on
narrow-channel effects from the University of Hong Kong, Hong Kong, in 1985. The work involved the development of both
analytical and numerical models, the study of this effect in relation to different isolation structures, and the
development of efficient numerical algorithms for device simulation.
He was a Postdoctoral Fellow with the University of Toronto, Toronto, ON, Canada. He proposed and implemented a
novel self-aligned structure for bipolar transistor and designed and implemented an advanced polyemitter bipolar
process with emphasis on self-aligned and trench isolation. He is currently with the Department of Electrical and
Electronic Engineering, the University of Hong Kong. His current research interests include thin gate dielectric for
FET devices based on Si, SiC, GaN, Ge, and organics and on microsensors for detecting gases, heat, light, and flow.
研究兴趣
论文共 144 篇作者统计合作学者相似作者
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2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)pp.1-3, (2019)
IEEE Transactions on Electron Devicesno. 4 (2017): 1722
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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)pp.1-2, (2017)
Applied physics lettersno. 12 (2017): 5
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Microelectronics reliability/Microelectronics and reliability (2016): 68
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作者统计
#Papers: 144
#Citation: 2019
H-Index: 24
G-Index: 38
Sociability: 6
Diversity: 1
Activity: 0
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