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个人简介
R. Chris Clarke (M'91–SM'93–F'06) received Higher National Certificates in chemistry and electrical engineering from Worcester University, Worcester, U.K.
He is currently a Program Director with Northrop Grumman Corporation, Linthicum, MD, where he is responsible for the direction and development of new technology for advanced systems. He is an accomplished and respected Leader in the fields of new materials growth, new device development, and transfer of technology to production. He performed the original work on vapor-phase epitaxy of pure and doped GaAs and InP films for microwave devices, both for millimeter-wave Gunn diodes and X-band MESFETs. Original investigative material work was also performed on the activation of ion-implanted impurities in gallium arsenide and on the impact of subsurface damage on devices fabricated in undoped GaAs substrates. More recently, CVD growth of 6H- and 4H-SiC was pioneered for the pure and doped structures required in the fabrication of the first 4H-SiC MESFET and SIT microwave devices. Recent research areas include GaN–AlGaN CVD, SiC hot-wall CVD, and aluminum nitride bulk crystal growth for microwave applications. Expert in the design of high-voltage microwave transistors, he has authored papers on high-efficiency castellated FETs and high-voltage GaAs power MESFETs. His UHF SiC SITs currently hold the record for the highest reported microwave power and efficiency of any semiconductor material, providing a sixfold improvement in power output per package when compared with commercial GaAs and silicon products.
研究兴趣
论文共 6 篇作者统计合作学者相似作者
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Hg Henry,G Augustine, Gc Desalvo, Rc Brooks, Rr Barron,Jd Oliver, Aw Morse, Bw Veasel, Pm Esker,Rc Clarke
IEEE Transactions on Electron Devicesno. 6 (2004): 839-845
1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCEpp.18-28, (1998)
CD Brandt,AK Agarwal,G Augustine, RR Barron,AA Burk,RC Clarke,RC Glass,HM Hobgood, AW Morse,LB Rowland,S Seshadri,RR Siergiej,TJ Smith,S Sriram,MC Driver,RH Hopkins
INSTITUTE OF PHYSICS CONFERENCE SERIES (1996): 659-664
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SILICON CARBIDE AND RELATED MATERIALS 1995 (1996): 769-772
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COMPOUND SEMICONDUCTORS 1994pp.373-376, (1995)
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Mc Driver,Rh Hopkins,Cd Brandt,Dl Barrett,Aa Burk,Rc Clarke, Gw Eldridge,Hm Hobgood, Jp Mchugh,Pg Mcmullin,Rr Siergiej,S Sriram
GAAS IC SYMPOSIUM - TECHNICAL DIGEST 1993pp.19-21, (1993)
作者统计
#Papers: 6
#Citation: 94
H-Index: 3
G-Index: 3
Sociability: 3
Diversity: 0
Activity: 0
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