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Rajendra Singh received the Ph.D. degree in physics from the Nuclear Science Centre, Jawaharlal Nehru University, New Delhi, India, in 2001. His Ph.D. work was concerned with the study of the effect of swift heavy ion irradiation on the electrical properties of Si and GaAs.
After that, he worked as a Postdoctoral Fellow at the Walter Schottky Institute, Technical University, Munich, Germany, from October 2001 to December 2003. There he worked on the design, fabrication, and characterization of InP-based heterojunction bipolar transistors. From January 2004 to October 2006, he was at the Max Planck Institute of Microstructure Physics, Halle, Germany, where he worked in the area of semiconductor wafer bonding, strained silicon-on-insulator (sSOI) fabrication, and hydrogen-implantation-induced layer splitting studies in SiGe, GaN, InP, and ZnO. He joined the Department of Physics, Indian Institute of Technology of Delhi, New Delhi, in November 2006. He has published about 30 papers in international journals and edited volumes.
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crossref(2024)
ACS APPLIED NANO MATERIALSno. 7 (2024): 8212-8220
Applied Surface Sciencepp.159832, (2024)
ACS Applied Nano Materials (2024)
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)pp.1-3, (2024)
JOURNAL OF PHYSICAL CHEMISTRY Cno. 32 (2023): 16010-16018
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ACS APPLIED NANO MATERIALSno. 15 (2023): 14300-14307
Sheetal Dewan,Prabal Dweep Khanikar, Richa Mudgal, Avneet Singh,Pranaba Kishor Muduli,Rajendra Singh,Samaresh Das
ACS applied materials & interfacesno. 22 (2023): 27285-27298
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