基本信息
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Career Trajectory
Bio
Shiro Hino received the B.E., M.E., and Ph.D. degrees in electrical engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 2003, 2005, and 2008, respectively. His Ph.D. dissertation is on “improvement of the channel mobility of deposited oxide/SiC interface.” Since 2008, he has been with the Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Japan. His current research interests include SiC MOSFETs for power module applications. Dr. Hino is a member of the Japan Society of Applied Physics.
Research Interests
Papers共 44 篇Author StatisticsCo-AuthorSimilar Experts
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Tomohiro Tamaki, Atsufumi Inoue,Masayuki Furuhashi,Shiro Hino, Makoto Hashimoto, Mitsuhisa Kawase, Yohei Sudo, Tsutomu Ogawa,Kazuyasu Nishikawa
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.558-561, (2024)
PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.1-5, (2023)
IEEE transactions on device and materials reliabilityno. 1 (2023): 99-108
Akifumi Iijima,Koutarou Kawahara,Katsutoshi Sugawara,Shiro Hino,Katsuhiro Fujiyoshi, Yasunori Oritsuki,Takeshi Murakami,Tetsuo Takahashi,Yasuhiro Kagawa, Yoichi Hironaka,Kazuyasu Nishikawa
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.238-241, (2023)
Materials Science Forum (2020): 801-807
PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.1-5, (2020)
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Materials science forum (2018): 778-781
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Author Statistics
#Papers: 46
#Citation: 765
H-Index: 18
G-Index: 27
Sociability: 5
Diversity: 2
Activity: 0
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