1/f noise and material defects in HgCdTe diodes

1/f noise is measured on long wavelength diodes as a function of device geometry, band gap, temperature, diode bias, and anneal temperature for a Te-rich CdTe passivation layer. The results show that for these diodes the 1/f noise is a bulk phenomena due to the modulation of generation recombination current associated with defects formed by the interdiffusion of Te-rich CdTe, and that these defects are located in the junction region. No 1/f noise is observed for the lowest interdiffusion anneal temperature.