The shape of self-assembled InAs islands grown by molecular beam epitaxy
Journal of Electronic Materials(1999)
摘要
We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands possess a pyramidal shape with 136 bounding facets. This shape is characterized by C 2 v symmetry and a parallelogram base, which is elongated along the [11̅0] direction. Cross-sectional transmission electron microscopy images taken along the [110] and [11̅0] directions as well as atomic force microscopy images strongly support the 136 shape. Furthermore, polarization-resolved photoluminescence spectra show strong in-plane anisotropy, with emission predominantly polarized along the [11̅0] direction, consistent with the proposed quantum dot shape.
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关键词
{136} facets,atomic force microscopy (AFM),cross-section transmission electron microscopy (TEM),InAs quantum dot shape,polarization-resolved photoluminescence (PL),reflection high energy electron diffraction (RHEED)
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