Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching

L. Manin-Ferlazzo,F. Carcenac,R. Teissier,G. Faini,D. Mailly

Microelectronic Engineering（1999）

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摘要

Highly anisotropic sub-100nm InP patterns presenting low roughness have been obtained using SiCl"4 reactive ion etching. Aspect ratios above 20 are reported with low sidewall damage characterized by transmission electron microscopy and conductance measurements. The influence of the material used as an etch mask on the anisotropy and the roughness of the etched structures is investigated.

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关键词

low roughness,low sidewall damage,aspect ratio,conductance measurement,etch mask,etched structure,reactive ion etching,sub-100nm InP pattern,transmission electron microscopy,SiCl4 reactive ion etching,anisotropic InP pattern,damage characterization

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