Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization

C. D. Young,D. Veksler,S. Rumyantsev,J. Huang,H. Park,W. Taylor,M. Shur, G. Bersuker

Microelectronic Engineering（2011）

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摘要

Low frequency noise (LFN) characterization was performed on the HfSiON gate stacks fabricated with the SiON interfacial layers (ILs) and a La cap layer. The LFN data identified N and La related defects located in the IL/HK region.

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关键词

hk region,la cap layer,la-induced defect,la related defect,low frequency noise,sion interfacial layer,low frequency noise characterization,lfn data,hfsion gate stack,hafnium,lanthanum

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