InN/In2O3 heterostructures

Cubic (c-) InN is predicted to possess superior electronic properties for device applications, while c-In2O3 is an excellent candidate as gate material for InN based high-frequency field effect transistors. In this paper, the epitaxial growth of the InN/In2O3 and In2O3/InN heterosystems was investigated. High-quality c-InN (001) was deposited on (001) In2O3 template, while single crystalline c-In2O3 was epitaxially grown on hexagonal InN (0001). The epitaxial relationship of the heterosystems was determined. Phenomenological models of the nucleation and of an atomic arrangement at the interface are proposed.