Surface Charge Control During High-Current Ion Implantation: Characterization with CHARM-2 Sensors

MI CURRENT,W LUKASZEK, MC VELLA,NH TRIPSAS

Nuclear instruments and methods in physics research Section B, Beam interactions with materials and atoms/Nuclear instruments & methods in physics research Section B, Beam interactions with materials and atoms（1995）

引用 9|浏览5

暂无评分

摘要

Studies of the charging effects during implantation with 9200 and 9500 tools using EEPROM-based sensors, CHARM-2, are reported for 60 keV As beams.

查看译文

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要