Two Gates Are Better Than One [Double-Gate MOSFET Process]

A planar self-aligned double-gate MOSFET process has been implemented where a unique sidewall source/drain structure (S/D) permits self-aligned patterning of the back-gate layer after the S/D structure is in place. This allows coupling the silicon thickness control inherent in a planar, unpatterned layer with VLSI self-alignment techniques and also gives independently controlled front and back gat...