Fully Depleted n-MOSFETs on Supercritical Thickness Strained SOI

I. Lauer,T. A. Langdo,Z.-Y. Cheng,J. G. Fiorenza,G. Braithwaite,M. T. Currie,C. W. Leitz,A. Lochtefeld,H. Badawi,M. T. Bulsara,M. Somerville,D. A. Antoniadis

IEEE Electron Device Letters（2004）

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摘要

Strained silicon-on-insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced parasitic capacitance and improved MOSFET scalability of thin-film SOI. We demonstrate fabrication of highly uniform SiGe-free SSOI wafers with 20% Ge equivalent strain and report fully depleted n-MOSFET results. We show that enhanced mobility is maintained i...

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关键词

MOSFET circuits,Fabrication,Silicon on insulator technology,Parasitic capacitance,Scalability,Semiconductor thin films,Capacitive sensors,Semiconductor films,Substrates,Silicon germanium

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