Thin nitride-capped poly-resistor for high density and high performance SRAM with self-aligned-contact

Dun-Nian Yaung,Yean-Kuen Fang,Kuo-Ching Huang,Shou-Gwo Wuu,Chung-S Wang,Mong-Song Liang

Electronics Letters（1999）

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摘要

A thin (45 Å) nitride-capped poly-resistor is presented which is compatible with the self-aligned-contact process owing to the use of high-temperature RTP annealing just after nitride deposition without pattern definition. It has several advantages, including a simple structure and fabrication process, tight control of the high poly-resistance and better I-V linearity

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关键词

fabrication,high-temperature rtp annealing,polysilicon resistor,45 angstrom,sram chips,silicon,sram,i-v linearity,si,rapid thermal annealing,elemental semiconductors,nitride cap deposition,resistors,self-aligned-contact

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