Resonant Electronic Raman Scattering and Electronic Structures of Bound Exciton Complex in ZnSe

Electronic Raman scattering of shallow donors in cubic ZnSe has been studied for the incident photon energy in the vicinity of the n =2 free exciton level. Raman scattering intensities for 1s→2s and 1s→2p excitations of donor electrons are resonantly enhanced as the photon energy coincides with the excited states of exciton-neutral donor complex. Since these excited states are located within the continuous dispersion of free exciton state, the large enhancement in the Raman scattering intensity has been attributed to the mixing of these excited states with the free exciton state. The resonant behavior of the electronic Raman scattering shows that these excited states correspond to the lowest lying electronic excited states of the exciton neutral donor complex.