324 nm Light Emitting Diodes with Milliwatt Powers

Ashay Chitnis,Jian Ping Zhang,Vinod Adivarahan,Wu Shuai,Jie Sun,Maxim Shatalov,Jin Wei Yang,Grigory Simin,Muhammad Asif Khan

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS（2002）

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摘要

Light emitting diodes with peak emission at 324 nm were fabricated over low-defect density n(+)-Al0.2Ga0.8N buffer layers. The AlGaN buffer layers were deposited over sapphire using strain-relieving AlN/AlGaN superlattices. Pulsed powers as high as 4 mW were measured for a pump current of 900 mA.

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关键词

UV LED,MQW,buffer,strain relief,AlGaN

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