Characterization of 30 nm nitrided oxides fabricated by rapid thermal nitridation

Abstract The electrical characteristics of 30 nm nitrided oxide layers fabricated by rapid thermal nitridation of SiO2 were investigated. The fixed positive charge, the interface state density, the interface state generation during stressing and the electron trapping are increased upon nitridation. The negative bias instability and the total hole trap density are strongly increased after a relatively short nitridation at low temperatures. Further nitridation reduces the hole trap density. Two types of hole traps, differing by their distance from the insulator/Si interface, are evidenced.