Current-voltage characteristics of vertical diodes for next generation memories

Hokyun An,Kong-Soo Lee,Yoongoo Kang,Seonghoon Jeong,Wonseok Yoo,Jae-Jong Han,Bonghyun Kim,Hanjin Lim,Seokwoo Nam,Gi-Tae Jeong,Ho-Kyu Kang,Chilhee Chung,Byoungdeog Choi

ESSDERC（2012）

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摘要

In this paper, current-voltage-temperature (I-V-T) characteristics of vertical diodes realized by different selective epitaxial growth techniques have been investigated. Diodes by the batch-type cyclic SEG process at low temperature have shown eligible performances for vertical switches, including ideality factor of 1.08, off-current of 1.0×10-12 A and on/off-ratio of 2.4×108. The optimization of crystallographic defects and series resistance is expected to be the most critical for the performances of vertical diodes for next generation memories.

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关键词

series resistance,semiconductor device models,random-access storage,vertical switches,selective epitaxial growth technique,semiconductor diodes,epitaxial growth,diode ideality factor,crystallographic defect,next generation memories,current-voltage-temperature characteristic,vertical diode,batch-type cyclic seg process

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