12.2: Solution Processable Passivation Layer for Active Matrix Thin Film Transistors on Rigid and Flexible Substrates

SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS(2008)

引用 9|浏览2
暂无评分
摘要
Organosiloxane based spin on planarizing dielectrics (PTS-E and PTS-R) were developed for application in flat panel displays as a replacement to conformal chemical vapor deposited SiNx. Here we demonstrate the successful use of siloxane-based material as a passivation layer for active matrix alpha-Si thin film transistors (TFT) on both rigid and flexible substrates.
更多
查看译文
关键词
thin film transistor
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要