Improvement of Cutoff Characteristics for In0.11Ga0.89N-Based Photocathodes Using Light-Emitting Diode Real Time Spectral Sensitivity Monitoring System
JAPANESE JOURNAL OF APPLIED PHYSICS(2010)
摘要
We have fabricated photomultiplier tubes (PMTs) with photocathodes consisting of In0.11Ga0.89N films. To realize sharp cutoff characteristics of the In0.11Ga0.89N-based photocathodes, a "real time" monitoring system was employed. This system utilized light sources of light-emitting diodes (LEDs), and their peak wavelengths are 285, 375, and 470 nm respectively. With this monitoring system, PMTs with InxGa1-xN-based photocathodes are realized to demonstrate sharp cutoff characteristics over three orders of magnitude with high quantum efficiencies (QEs). (C) 2010 The Japan Society of Applied Physics
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关键词
light emitting diode,spectral sensitivity,real time,quantum efficiency
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