Low-temperature grown GaAs tunnel junctions

S. Ahmed, M. R. Melloch,D. T. McInturff,J. M. Woodall,E. S. Harmon

Electronics Letters（1997）

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摘要

A GaAs tunnel junction is formed by molecular beam epitaxy at low substrate temperatures to incorporate excess arsenic, followed by an anneal to precipitate the excess arsenic. This tunnel junction is comparable in resistance and peak current density to tunnel junctions grown stoichiometrically. Owing to the inhomogeneity in this two-phase tunnel junction, there is only a slight indication of a current peak. This lack of a valley in the tunnelling characteristic results in a low voltage drop even for currents in excess of the peak current.

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III-V semiconductors,current density,gallium arsenide,molecular beam epitaxial growth,p-n junctions,semiconductor growth,tunnelling,GaAs,GaAs tunnel junctions,MBE,anneal,excess As,low substrate temperatures,low voltage drop,low-temperature grown junctions,molecular beam epitaxy,peak current density,resistance,tunnelling characteristic,two-phase tunnel junction

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