Pseudomorphic 2DEG FET IC's for 10 Gb/s optical communication systems with external optical modulation

Y. Suzuki,T. Suzaki,Y. Ogawa,S. Fujita,W. Liu,A. Okamoto

IEEE Journal of Solid-state Circuits（1992）

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摘要

An optical modulator driver IC and a preamplifier IC for 10-Gb/s optical communication systems are developed using AlGaAs/InGaAs/GaAs pseudomorphic two-dimensional electron gas (2DEG) FET's with a gate length of 0.35 mum. The optical modulator driver IC operates at a data rate up to 10 Gb/s with a large output voltage swing of more than 4 V(p-p). The bandwidth for the preamplifier IC is 13.0 GHz with a 47-dB . OMEGA transimpedance gain. In addition, optical transmission experiments with external optical modulation using these IC's have successfully been carried out at 10 Gb/s.

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关键词

III-V semiconductors,aluminium compounds,driver circuits,field effect integrated circuits,gallium arsenide,indium compounds,optical communication equipment,optical modulation,preamplifiers,0.35 micron,10 Gbit/s,13 GHz,AlGaAs-InGaAs-GaAs,bandwidth,data rate,external optical modulation,gate length,optical communication systems,optical modulator driver IC,optical transmission,output voltage swing,preamplifier IC,pseudomorphic 2DEG FET IC,transimpedance gain

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