Selectively Doped GaAs/N-Al_0.3Ga_0.7As Heterostructures Grown by Gas-Source MBE

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS（1988）

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arsenic,gallium arsenide,electron density,crystal growth,two dimensional electron gas,mass spectroscopy,molecular beam epitaxy

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Selectively Doped GaAs/N-Al0.3Ga0.7As Heterostructures Grown by Gas-Source MBE