4H-SiC MESFETs behavior after high dose irradiation

Brisset, C.,Noblanc, O.,Picard, C.,Joffre, F.

IEEE Transactions on Nuclear Science（1999）

引用 13|浏览2

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摘要

This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate

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关键词

Schottky gate field effect transistors,gamma-ray effects,silicon compounds,wide band gap semiconductors,4H-SiC,MESFET,SiC,dose response,electrically active defects,high dose irradiation,semi-insulating substrate,total dose level,

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