Sensitivity optimization of epitaxial graphene based gas sensors

Novikov, S.,Satrapinski, A.,Lebedeva, N.,Iisakka, I.

IEEE Transactions on Instrumentation and Measurement（2012）

引用 7|浏览10

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摘要

Epitaxial 4H-SiC graphene films were fabricated and tested for sensing ambient gases. Sensitivity response to nitrogen dioxide was optimized by varying operation temperature and humidity. At elevated temperature the response was found to be -10.0 % of the resistance change when the gas mixture with NO2 concentration of 10 parts per billion (10 ppb) was applied. Optimisation of sensitivity can be done by control and adjustment of the operation temperature and humidity level.

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关键词

epitaxial layers,gas sensors,graphene,wide band gap semiconductors,C,SiC,ambient gas sensing,epitaxial graphene films,epitaxial graphene sensitivity optimization,gas mixture,gas sensors,humidity level,nitrogen dioxide,temperature level,Epitaxial graphene,gas sensor,graphene fabrication,measurement techniques,sensitivity measurement,

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