wo-dimensional finite element simulation of semiconductor devices

Electronics Letters（1974）

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摘要

Semiconductor-device modelling in two dimensions by the finite-element method is described. Results of application to a GaAs m.e.s.f.e.t. are given. Negative differential drain conductance is observed.

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关键词

field effect transistors,finite element analysis,semiconductor device models,field effect transistors,finite element analysis,negative differential drain conductance,semiconductor device models,semiconductor devices,simulation

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