Simulation and Experiments of Stress Migration for Cu/low-k BEoL

C. J. Zhai,H. W. Yao, A. P. Marathe,P. R. Besser,R. C. BlishII

IEEE Transactions on Device and Materials Reliability（2004）

引用 33|浏览2

暂无评分

摘要

Stress migration (SM) or stress-induced voiding experiments were conducted for two back-end-of-line (BEoL) technologies: Cu/FTEOS and Cu/low-k. Experiments have shown the mean time to failure (MTF) depends on inter-layer dielectric (ILD) materials properties, ILD stack and metal line width. Stress migration is worse in Cu/low-k, manifesting as significantly reduced MTF under accelerated testing. L...

查看译文

关键词

Samarium,Thermal stresses,Temperature,Stress measurement,Power system modeling,Performance evaluation,Materials testing,Life estimation,Finite element methods,Semiconductor device modeling

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要