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First Results from GaAs Double-Sided Detectors

SP BEAUMONT,R BERTIN,CN BOOTH,C BUTTAR,L CARRARESI,F CINDOLO,M COLOCCI,FH COMBLEY,S DAURIA,C DELPAPA,M DOGRU,M EDWARDS,F FOSTER,A FRANCESCATO,S GOWDY,R GRAY,G HILL,Y HOU,P HOUSTON,G HUGHES,BK JONES,JG LYNCH,B LISOWSKI,J MATHESON,F NAVA,M NUTI,V OSHEA,PG PELFER,C RAINE,J SANTANA,IJ SAUNDERS,PH SELLER,K SHANKAR, PH HSARP,IO SKILLICORN,T SLOAN,KM SMITH,I TENHAVE,RM TURNBULL,U VANNI,A ZICHICHI

Nuclear instruments and methods in physics research Section A, Accelerators, spectrometers, detectors and associated equipment/Nuclear instruments & methods in physics research Section A, Accelerators, spectrometers, detectors and associated equipment（1994）

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摘要
Preliminary results are presented on the performance of double-sided microstrip detectors using Schottky contacts on both sides of a semi-insulating (SI) GaAs substrate wafer, after exposure to 10(14) neutrons cm-2 at the ISIS facility. A qualitative explanation of the device behaviour is given.
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