Silicon light emitting device in CMOS technology

A novel silicon light emitting device was realized with standard 0.35 µm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm 2 . The optical spectrum of the device is in the range of 500–820 nm.